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  • 11
    facet.materialart.
    Unknown
    Cambridge : Periodicals Archive Online (PAO)
    The Modern language review. 21 (1926) 86 
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  • 12
    facet.materialart.
    Unknown
    Cambridge : Periodicals Archive Online (PAO)
    The Modern language review. 23 (1928) 79 
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  • 13
    Electronic Resource
    Electronic Resource
    Springer
    Microchimica acta 70 (1978), S. 31-50 
    ISSN: 1436-5073
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Zusammenfassung Eine Methode zur semiquantitativen SIMS-Analyse, die im Gegensatz zu den aus der Literatur bekannten Verfahren nur einen Anpassungsparameter benötigt, wurde mit gutem Erfolg an Metall- und Mineralstandards getestet. Werte des Anpassungsparameters für verschiedene Matrices wurden angegeben und Aussichten für eine Weiterentwicklung dieser Methode in Richtung auf standardfreie Analysen wurden besprochen. Die analytische Richtigkeit für einige Elemente wurde mit Hilfe von matrixunabhängigen Fehlerfaktoren abgeschätzt.
    Notes: Summary A procedure for SIMS semiquantitative analysis, based on the use of one fitting-parameter, has been applied to metal and mineral standards with satisfactory results. Values of this parameter for various matrices are given, and prospects for analyses involving no reference elements are discussed. Analytical accuracies obtainable for individual elements are assessed in terms of matrix-independent error factors.
    Type of Medium: Electronic Resource
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  • 14
    ISSN: 1432-0630
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A passive layer, of several thousand Å thickness, formed on a polycrystalline nickel electrode, has been examined using secondary ion mass spectrometry (SIMS) by spottering with a 5.5 keV, 13μA·cm−2,40Ar+ primary beam. Concentration profiles were detived by monitoring the intensities of atomic and molecular mass peaks as a function of sputtering time (i.e. depth). Nickel was present throughout the layer but not as the element since the relative intensities of the Ni n + (n=1, 2, 3, 4) peaks, constituting part of its fingerprint spectrum, differed from those in the fingerprint spectrum of elemental nickel. These values were eventually reached, signifying piercing of the layer and thus providing a means of estimating its thickness. Imaging of58Ni+ showed the presence of nickel in at least two different modifications in the layer, both with higher Ni+ yields than the bulk nickel. Their fractional coverages were estimated from the images taken at various depths. The resulting profile of the Ni+ originating from one of these modifications was found to be proportional to the16O− profile, indicating that these ions originate from the same molecule. This example demonstrates the advantage of combining different SIMS modes (viz. depth profiles, fingerprint spectra and imaging) in tackling certain analytical problems.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 12 (1977), S. 283-286 
    ISSN: 1432-0630
    Keywords: 07 ; 61.80 ; 68.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rapid and reliable SIMS profiling of insulators can be achieved by using negative primary ions and a diaphragm placed on the specimen for charge compensation. Results with garnet LPE layers demonstrate the compositional variations arising from non-steady state growth conditions.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 11 (1976), S. 193-195 
    ISSN: 1432-0630
    Keywords: 07
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Changes in molecular secondary ion intensities brought about by working in an environment of oxygen can be rationalised in simple statistical terms.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 2 (1980), S. 46-52 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The increased dependence of the sputter yield of silicon on the angle of incidence under oxygen ion bombardment, as compared to argon ion bombardment, observed during a SIMS analysis is discussed. Taking into account that the sputter yield depends on the implanted oxygen concentration, a relation is derived between the steady state sputter yield and the implanted oxygen surface concentration for different angles of incidence. Since this relation is in itself insufficient to determine the steady state values of the sputter yield and the surface concentration actually obtained, a graphical method is used to combine it with a second one, viz. the dependence of the momentary sputter yield on the momentary surface concentration. Measurements of the steady state sputter yield of silicon, bombarded by oxygen ions in the lower keV range at different angles of incidence, agree with the predicted values.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 18
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Measurements have been made of positive secondary ion currents from oxygen bombardment of glass standards, obtained either from NBS or specially prepared in this laboratory. By using one fitting parameter, the ionization temperature Ti, a semi-quantitative analysis (accurate to within a factor of 2-3) is possible on any one of these standards. This approach, whilst achieving an accuracy comparable to that obtainable using relative sensitivity factors, does not restrict the analysis to those elements for which sensitivity factors are available. Further, change of sample matrix, which can alter sensitivity factors in a seemingly puzzling fashion, can easily be rationalized and accommodated through variation in Ti. Values of Ti for 16 binary oxides lie between 5500 and 9500 K. The Ti value for a more complex matrix can be estimated on a proportional basis from these binary oxide results.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Details are given of a round robin depth profile comparison between 9 SIMS instruments (6 instrument types) applied to the analysis of an ion implanted Si(B) sample. It is shown that the shape of the boron profile is not sensitive to the sputter conditions employed and that the profile width data shows agreement to within 10% over the concentration range ∼1021 to 1015 cm-3 (104 to 0.02 ppma). This level of agreement is encouraging and gives confidence in the reliability of the SIMS method. Instrumental factors which control the profile dynamic range are shown to be dependent on the system configuration. With the quadrupole-based raster scanning instruments the quality of the primary beam is of importance, while with the imaging ion microscope systems, memory effects are significant. A dynamic range of ∼5 × 105 is obtained from both types of instrument. The analysis of identical samples prepared by ion implantation should enable other SIMS workers to check instrumental performance.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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