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  • 11
    Electronic Resource
    Electronic Resource
    Shear force microscopy with capacitance detection for near-field scanning optical microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1432-1434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shear force microscopy is very useful for distance regulation in near-field scanning optical microscopy (NSOM). However, the optical method used to detect the shear force can cause problems when imaging photosensitive materials, i.e., the shear force detection beam can optically pump the sample. We present here a new approach to shear force detection based upon capacitance sensing. The design, operation, and performance of the capacitance detection are presented. Shear force topographic images of hard and soft surfaces are shown using tungsten and NSOM fiber tips. The closed loop vertical sensitivity achieved is 0.01 nm/(square root of)Hz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113269
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  • 12
    Electronic Resource
    Electronic Resource
    Micromachined submicrometer photodiode for scanning probe microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2309-2311 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A submicrometer photodiode probe with a sub-50 nanometer tip radius has been developed for optical surface characterization on a nanometer scale. The nanoprobe is built to detect subwavelength optical intensity variations in the near field of an illuminated surface. The probe consists of an Al–Si Schottky diode constructed near the end of a micromachined pyramidal silicon tip. The process for batch fabrication of the nanoprobes is described. Electrical and optical characterization measurements of the nanoprobe are presented. The diode has a submicrometer optically sensitive area with a 150 fW sensitivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114223
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  • 13
    Electronic Resource
    Electronic Resource
    Atomic ordering of GaInP studied by Kelvin probe force microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1264-1266 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic ordering of GaInP has been established and studied by a variety of methods, including transmission electron microscopy, cathodoluminescence, and photoluminescence. In this work, a Kelvin probe force microscope (KPFM) has been employed to image several GaInP samples previously characterized by these established techniques. The results of our study clearly show that the KPFM is capable of distinguishing between ordered and disordered regions in GaInP, and that the KPFM contrast strongly depends on the amplitude of the applied ac bias voltage of the KPFM. The measurements indicate that ordering in GaInP modifies the density and/or lifetime of the surface states. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113257
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  • 14
    Electronic Resource
    Electronic Resource
    Quantitative two-dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 344-346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative dopant profile measurements are performed on a nanometer scale by scanning capacitance microscopy (SCM). An atomic force microscope is used to position a nanometer scale tip at a semiconductor surface, and local capacitance change is measured as a function of sample bias. A new feedback method has been demonstrated in which the magnitude of the ac bias voltage applied to the sample is adjusted to maintain a constant capacitance change as the tip is scanned across the sample surface. A quasi-1D model is used to extract dopant density profiles from the SCM measurements. The inverted SCM dopant profiles are compared with profiles obtained by process simulation and secondary ion mass spectroscopy measurement. Good agreement was found between the SCM measured profile and the lateral profile predicted by SUPREM 4 over the concentration range from 1017 to 1020 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114207
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  • 15
    Electronic Resource
    Electronic Resource
    Nanometer-scale absorption spectroscopy by near-field photodetection optical microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-field photodetection optical microscopy (NPOM) is a fundamentally new approach to near-field optical microscopy. This scanning probe technique uses a nanometer-scale photodiode detector which absorbs optical power directly as it is scanned in the near field of an illuminated sample surface. We have applied NPOM to measure the visible absorption spectrum of dye molecules embedded in a single 300 nm polystyrene sphere. The near-field absorption spectrum is obtained by measuring the NPOM probe photocurrent while the wavelength of the illumination pump beam is scanned from 450 to 800 nm. Peaks are identified at 567, 608, and 657 nm in the near-field spectrum of the single-dyed polystyrene sphere. These peak positions are in good agreement with far-field absorption measurements performed on many dyed polystyrene spheres. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117403
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  • 16
    Electronic Resource
    Electronic Resource
    Electron tunneling detected by electrostatic force (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3615-3617 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is introduced for measuring the tunneling of electrons between a specially fabricated scanning probe microscope tip and a surface. The technique is based upon electrostatic force detection of charge as it is transferred to and from a small (10−17 F) electrically isolated metallic dot on the scanning probe tip. The methods for dot fabrication, charging, and discharging are described and electron tunneling to a sample surface is demonstrated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330568
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  • 17
    Electronic Resource
    Electronic Resource
    THE CAUSE OF “BLACK BEETS”: AN EXAMPLE OF OLIGODYNAMIC ACTION AS A CONTRIBUTORY CAUSE OF SPOILAGE (1936)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 1 (1936), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1936.tb17771.x
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  • 18
    Electronic Resource
    Electronic Resource
    TWO-DIMENSIONAL DOPANT PROFILING BY SCANNING CAPACITANCE MICROSCOPY (1999)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 29 (1999), S. 471-504 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The scanning capacitance microscope (SCM) provides a direct method for mapping the dopant distribution in a semiconductor device on a 10 nm scale. This capability is critical for the development, optimization, and understanding of future ULSI processes and devices. The basic elements of the SCM and its application to nanometer scale metal oxide semiconductor (MOS) capacitor measurements are described. Experimental SCM methods are reviewed. Basic measurements show that nanometer scale capacitance-voltage relations are understood. High-quality probe tips and surfaces are critical for obtaining accurate measurements of two-dimensional dopant profiles. Quantitative modeling of SCM measurement is described for converting raw SCM data to dopant density. An inverse modeling method is presented. Direct comparison between secondary ion mass spectroscopy (SIMS) and SCM-measured dopant profiles are made. Quantitative junction measurements and models are discussed and images of small transistors are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.29.1.471
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  • 19
    Electronic Resource
    Electronic Resource
    Restraining Restraints: Changes in a Standard of Care (1993)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Public Health 14 (1993), S. 545-584 
    Details
    ISSN: 0163-7525
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.pu.14.050193.002553
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  • 20
    Electronic Resource
    Electronic Resource
    Scanning capacitance microscope methodology for quantitative analysis of p-n junctions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7774-7783 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantification of dopant profiles in two dimensions (2D) for p-n junctions has proven to be a challenging problem. The scanning capacitance microscope (SCM) capability for p-n junction imaging has only been qualitatively demonstrated. No well-established physical model exists yet for the SCM data interpretation near the p-n junction. In this work, the experimental technique and conversion algorithm developed for nonjunction samples are applied to p-n junction quantification. To understand the SCM response in the active p-n junction region, an electrical model of the junction is proposed. Using one-dimensional secondary ion mass spectrometry (SIMS) data, the carrier distribution in the vertical dimension is calculated. The SIMS profile and carrier distribution is then compared with the SCM data converted using a first-order model. It is shown that for a certain class of profiles, the SCM converted dopant profile fits well to the SIMS data in one dimension. Under this condition, it is possible to identify the metallurgical p-n junction position in two dimensions. Examples of 2D metallurgical p-n junction delineation are presented. In addition, the SCM ability to locate the 2D position of the intrinsic point in the p-n junction depletion region is demonstrated. The SCM probe tip size is found to be a major factor limiting the SCM accuracy on shallow profiles. On junctions with shallow profiles, the SCM tip interacts with carriers on both sides of the junction. As a consequence, a decrease in accuracy and spatial resolution is observed using a first-order conversion algorithm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370584
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