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  • 11
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters B 62 (1976), S. 121-123 
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters B 103 (1981), S. 92-98 
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physics Letters B 48 (1974), S. 183-185 
    ISSN: 0370-2693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 286 (1978), S. 173-180 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We present conclusions for the8Be scattering system from a multi-channel calculation in the framework of a microscopic nuclear cluster model. The energy region fromα-α threshold up to 30 MeV center of mass is investigated; results of an eigenphase analysis forJ π-values from 0+ to 4+ and 0− to 4− are displayed. For comparison and completion we have performed quasibound state calculations taking into account possible combinations of participating structures. The results throw light upon a complicated sequence of resonant states and moreover predict the occurrence of some additional levels in the energy spectrum.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Springer
    Mathematische Annalen 7 (1874), S. 583-590 
    ISSN: 1432-1807
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Springer
    Czechoslovak journal of physics 32 (1982), S. 288-290 
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Calculations in the framework of the refined resonating group method (RRGM) have been particularly successful in describing light nuclear systems with mass numbers 3 ≦ A ≦ 12 in the low-energy domain. Further developments of this approach to extend the realm of applicability beyond its present limits are introduced. We merge SU3-cluster model and RRGM techniques for the investigation of higher mass numbers (A ≦ 28), incorporate one-body operators for the description of, e.g., photo-induced processes, and add polynomials in the intercluster functions to allow the description of medium-energy processes.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' journal of analytical chemistry 358 (1997), S. 119-121 
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The applicability of models based on fractal geometry to characterize thin-film surfaces is investigated. The fractal geometry of sputtered chromium nitride and silicon nitride thin film surfaces is described using Fourier profile analysis of scanning tunneling microscopy images and a box counting method. The CrNx- and SiNx-coatings were deposited on silicon wafers by reactive magnetron sputtering. The columnar structure of the amorphous silicon nitride varied with deposition similarly to the stucture of the polycrystalline chromium nitride films. For quantitative comparison of film morphology, an average column diameter has been used as a characteristic. The average column diameter increases with increasing gas pressure because of shadowing processes during deposition. The fractal dimension decreases with increasing pressure. Films with fine columnar structures are characterized by a larger fractal dimension than films with a coarse columnar structure. The fractal dimension determined by Fourier analysis is larger than the dimension calculated by the box counting method. The reason may be the limited pixel density of digitized images.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' journal of analytical chemistry 365 (1999), S. 168-172 
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The fractal dimension of sputtered thin film surfaces was determined. Topography was measured using scanning tunneling microscopy (STM) and atomic force microscopy (AFM). It can be shown that measuring conditions have an important influence on the topographic data and the obtained fractal dimension. This influence was investigated systematically. The results of STM- and AFM-measurements have been compared. The results for surfaces imaged with AFM give lower values for the fractal dimension than with STM. Measurements were carried out with a standard cantilever and so the data have been filtered. Dynamic behavior of the measuring system is influenced by scanning speed and loop gain factor. During measurement of topographic signal high scanning speed and low loop gain factor produce a low pass behavior and the fractal dimension will be varied. If there is a disturbance in addition to the topographic signal (e.g. a noise) we found power spectra with more than one linear part. The calculated fractal dimension especially depended on the density of measuring points in the profile. The experimental results were verified by calculated Weierstrass-Mandelbrot functions.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 0006-3592
    Keywords: Chemistry ; Biochemistry and Biotechnology
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Cultivation of Norcardia sp., Mycobacterium phlei, and Candida lipolytica in inorganic salt solution containing n-alkanes C10-C20 as solo carbon and energy source was investigated. Generation times of 0.5-7.0 hr were typical during the exponential growth phase. The final cell concentrations (dry weight) were usually 9-26 g/l with n-alkane mixtures ranging from n-decane through n-eicosane. A linear dependence was found between the production of cell mass and the consumption of n-alkanes. The rest concentration of n-alkanes in the cell mass is in all experiments smaller than 0.5% (w/w). Cell yields were Ysub 60-142% and for Ye 50-97% based on n-alkane utilization. In one case, with the Nocardia NBZ 23, the substrate specifity on hydrocarbons and on a n-alkane mixture C10-C20 was studied. The cell mass recovered from the fermentations contained 47.8-57.7% carbon, 5.6-9.95% nitrogen, 7.2-9.4% hydrogen, 35-62% crude protein, and 6-36% lipid. Cellular protein and lipid synthesized by an organism is influenced by the type of nitrogen source. The amino acid, glucosamine, muramic acid, 2,6-diaminopimelinic acid, and fatty acid distribution in organisms grown on n-alkanes compared with a corresponding fermentation on glucose as sole carbon source were also estimated.
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 364-368 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract SiNx-coatings have been deposited by reactive magnetron sputtering. Gas pressure and film thickness have been varied. Scanning electron microsopic views of the cross sections show a columnar structure as well as polycrystalline films varying with deposition parameters. For quantitative comparisons of the film morphology an average column diameter has been used as a characteristic value obtained from TEM images. Similar results have been obtained by scanning tunneling microscope avoiding a large expenditure of preparation. Scanning tunneling microscopy is suitable for investigations of the fractal nature of top surface of thin films and to determine the height function of thin SiNx-coatings on silicon wafers directly. Computer simulations of sputter processes allow to discuss the evolution of microstructures qualitatively.
    Type of Medium: Electronic Resource
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