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  • 21
    Electronic Resource
    Electronic Resource
    Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si〈sup〉+〈/sup〉-/N〈sup〉+〈/sup〉-Co-Implanted 4H-SiC (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 483-485 (May 2005), p. 641-644 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-/N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400°C and 1700°C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or Cvacancies. At our present knowledge, we favor an (NX-SiY)-complex
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.641.pdf
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  • 22
    Electronic Resource
    Electronic Resource
    PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 483-485 (May 2005), p. 319-322 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The aim of the present work is to grow 3C-SiC on (0001) 6H-SiC seeds using thePhysical Vapour Transport (PVT) method and to study the electrical and structural properties of the grown material. Photoluminescence (PL)-mappings reveal that the overgrown layer consists predominantly of the 3C-SiC polytype and capacitance-voltage (C-V) measurements result in a net nitrogen donor concentration of 1x1016cm-3. Transmission Electron Microscopy (TEM)observations also confirm that the overgrown layer is of the 3C-SiC polytype having the cubic [111] crystallographic direction parallel to the c-axis of the 6H-SiC substrate. In some cases, twin crystals of 3C-SiC are formed immediately after the interface and, in a few cases, small 6H-SiC inclusions are observed in the cubic film having the same orientation as the substrate. The film near the substrate/overgrown interface shows a high density of defects such as dislocations and stacking faults (SF’s), which propagate into the overgrown layer. Finally although there is a rapid decrease of the defect density within the first 60 µm from the interface, the SF density remains almost constant within the last 100 µm below the surface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.319.pdf
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  • 23
    Electronic Resource
    Electronic Resource
    Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 555-560 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In n-type 4H-SiC, over-oxidation of an implanted surface-near, Gaussian nitrogen-profileresults in MOS capacitors, which possess a distinctly reduced density of interface states Dit and anundesirable large negative flatband voltage UFB. Their values are determined by the implantationparameters and the thickness of the oxide layer. The negative flatband voltage can strongly becompensated in the case that a Gaussian aluminum-profile is co-implanted prior to the oxidation.Depending on the conditions of the Al implantation, UFB can be controlled within a wide range.Secondary ion mass spectrometry analyses reveal that the implanted N and Al atoms are mobile inthe oxide layer during the oxidation process and are partly accumulated at the SiC/SiO2 interface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.555.pdf
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  • 24
    Electronic Resource
    Electronic Resource
    Two Different Species of Traps Monitored at N-Implanted 3C-SiC MOS Capacitors by Conductance Spectroscopy (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 727-730 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: 3C-SiC/SiO2-capacitors are fabricated by over-oxidation of an implanted Gaussiannitrogen (N) profile and investigated by conductance spectroscopy. A double peak structure isobserved in the conductance spectra indicating two types of traps, which change their charge state atidentical time constant, however, which are located at different energy positions in the bandgap of3C-SiC. The experimental G/w-V and C-V characteristics are simulated and the existence of twotypes of traps is verified in the framework of a theoretical model
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.727.pdf
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  • 25
    Electronic Resource
    Electronic Resource
    Ischemia with intermittent reperfusion reduces functional and morphologic damage following renal ischemia in the rat (1993)
    Springer
    Annals of vascular surgery 7 (1993), S. 150-155 
    Details
    ISSN: 1615-5947
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Attempts to minimize ischemic injury by interrupting a given ischemic period might be compromised if repeated bouts of reperfusion injury occurred. To determine whether intermittent ischemia improved or worsened functional and morphologic outcome of renal ischemia, halothaneanesthetized rats underwent a right nephrectomy and placement of a snare about the left renal vascular pedicle at 37° C. Eleven animals underwent 45 minutes of continuous renal ischemia (C-ISC), whereas 10 animals received 45 minutes of vessel occlusion interrupted (I-ISC) at 15 and 30 minutes by snare release and 5 minutes of reperfusion. A group of three sham rats underwent the above procedure but did not have the snare tightened. Blood samples were drawn preoperatively and 24, 48, and 72 hours postoperatively for creatinine analysis. At 72 hours the animals were sacrificed and their kidneys morphologically evaluated. The C-ISC group had a significantly higher mean postoperative plasma creatinine (p〈0.01) as well as significantly higher plasma creatinine levels at 24 (p〈0.005) and 48 hours (p〈0.05) than did the I-ISC group. The C-ISC group also demonstrated significantly greater histologic damage than the I-ISC group (p〈0.002) when assessed by a pathologist blinded to the intervention. Sham rats did not demonstrate functional or morphologic damage. These data demonstrate a significantly improved outcome when 45 minutes of renal ischemia is interrupted by periods of reperfusion. We are led to conclude that in this setting reperfusion injury did not overwhelm the salutary effects of interrupting the 45-minute ischemic event.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02001009
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  • 26
    Electronic Resource
    Electronic Resource
    Cell surface effects of human immunodeficiency virus (1988)
    Springer
    Bioscience reports 8 (1988), S. 35-48 
    Details
    ISSN: 1573-4935
    Keywords: human immunodeficiency virus ; AIDS ; cell fusion
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Cell killing by human immunodeficiency virus (HIV) is thought to contribute to many of the defects of the acquired immunodeficiency syndrome (AIDS). Two types of cytopathology are observed in HIV-infected cultured cells: cell-cell fusion and killing of single cells. Both killing processes appear to involve cell surface effects of HIV. A model is proposed for the HIV-mediated cell surface processes which could result in cell-cell fusion and single cell killing. The purpose of this model is to define the potential roles of individual viral envelope and cell surface molecules in cell killing processes and to identify alternative routes to the establishment of persistently-infected cells. Elucidation of HIV-induced cell surface effects may provide the basis for a rational approach to the design of antiviral agents which are selective for HIV-infected cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01128970
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  • 27
    Electronic Resource
    Electronic Resource
    Finite proliferative lifespanin vitro of a human breast cancer cell strain isolated from a metastatic lymph node (1993)
    Springer
    Breast cancer research and treatment 28 (1993), S. 267-276 
    Details
    ISSN: 1573-7217
    Keywords: human breast cancer ; immortalization ; in vitro growth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We recently described culture conditions that allow proliferation of metastatic human breast cancer cells from biopsy specimens of certain patient samples. These conditions resulted in the development of an immortalized cell strain designated SUM-44PE. These same culture conditions were used to isolate a human breast cancer cell strain from a metastatic lymph node of a separate breast cancer patient. The SUM-16LN human breast cancer cells isolated from this specimen were cultured either in serum-free medium or serum-containing medium supplemented with insulin and hydrocortisone. Unlike the SUM-44PE cells that have proliferated in culture continuously for over two years, SUM-16LN cells proliferated in culture for approximately 200 days and underwent 15 to 20 population doublings before undergoing cell senescence. No cells of this strain proliferated beyond passage 8. SUM-16LN cells were keratin-19 positive and had an aneuploid karyotype. These cells overexpressed p53 protein and had an amplified epidermal growth factor (EGF) receptor gene that resulted in high level expression of tyrosine phosphorylated EGF receptor protein. Despite the presence of high levels of tyrosine phosphorylated EGF receptor in these cells, they proliferated in serum-free, EGF-free medium and did not secrete detectable levels of EGF-like mitogenic growth factor. In addition, these cells were potently growth inhibited by all concentrations of exogenous EGF tested and by the neutralizing EGF receptor antibody Mab 425. These results suggest that the high level of tyrosine phosphorylated EGF receptor present in these cells is the direct result of receptor overexpression and not the result of the presence of a simulatory ligand. Thus, SUM-16LN represents a human breast cancer cell strain that exhibited genetic and cellular characteristics of advanced human breast cancer cells. Nevertheless, these cells exhibited a finite proliferative lifespan in culture, suggesting that cellular immortalization is not a phenotype expressed by all human breast cancer cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00666588
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  • 28
    Electronic Resource
    Electronic Resource
    Hamilton's equations of motion for non-conservative systems (1994)
    Springer
    Celestial mechanics and dynamical astronomy 60 (1994), S. 409-419 
    Details
    ISSN: 1572-9478
    Keywords: Hamilton's equations of motion ; non-conservative forces
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper deals with the Hamilton equations of motion and non conservative forces. The paper will show how the Hamilton formalism may be expanded so that the auxiliary equations for any problem may be found in any set of canonical variables, regardless of the nature of the forces involved. Although the expansion does not bring us closer to an analytical solution of the problem, it's simplicity makes it worth noticing. The starting point is a conservative system (for instance a satellite orbiting an oblate planet) with a known Hamiltonian (K) and canonical variables {Q, P}. This system is placed under influence of a non-conservative force (for instance drag-force). The idea is then to use, as far as possible, the same definitions used in the conservative problem, in the process of finding the auxiliary equations for the perturbed system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00692025
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  • 29
    Electronic Resource
    Electronic Resource
    Thermal Stability of an Azo Dye-Containing Liquid Crystalline Side Group Polymer (1997)
    New York, NY : Wiley-Blackwell
    Journal für Praktische Chemie/Chemiker-Zeitung 339 (1997), S. 79-81 
    Details
    ISSN: 0941-1216
    Keywords: Chemistry ; Organic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/prac.19973390113
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  • 30
    Electronic Resource
    Electronic Resource
    Die selektive invers-voltammetrische Bestimmung des Antimons in salzsauren Lösungen nach Lösungswechsel in einer einfachen Durchflußzelle (1987)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 327 (1987), S. 670-673 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary The selective invers-voltammetric determination of antimony in a simple flow-through cell in hydrochloric acid solutions is described. After double medium exchange for post-electrolysis and inverse-voltammetric determination, the determination of antimony is possible in the presence of a large excess of copper, bismuth and other elements. The limit of determination is 0.2–0.3 ppb Sb, the reproducibility 1.5% (10 ppb Sb).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00489158
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