ISSN:
1432-0630
Keywords:
PACS: 73.20.
;
r; 73.30.+ y
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. Electrical characterisation of silicon surfaces contaminated by a zinc-sulphide overlayer has been carried out by forming Schottky diodes on the silicon after the ZnS has been etched off. The techniques include current–voltage, capacitance–voltage, and deep–level transient spectroscopy. The Schottky diodes show clear “memory” of the presence of the ZnS overlayer and the electrical characteristics are far from ideal. Five deep levels in the sub-surface region of the silicon are detected, corresponding to the Zn+, Zn++, S-, S-- states and probably to a Zn–B complex (p-type). Diffusion of the zinc and sulphur into the silicon is therefore confirmed and this diffusion is thought to create a compensated layer at the interface. These impurity states control the electrical characteristics of the surface in these diodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01542875
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