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  • 1
    Electronic Resource
    Electronic Resource
    Far-infrared ellipsometer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 870-875 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A far-infrared rotating-analyzer ellipsometer which uses a step-tunable, optically pumped gas laser as its light source is described herein. As polarizers novel metal grids with 10 000:1 polarization contrast were used. The instrument determines the complex dielectric function in the spectral range between 10 and 150 cm−1. A cryostat allows both reflection and transmission measurements from 10 to 330 K. Measurements of the birefringence of crystalline quartz, of both the carrier density and the scattering frequency of doped semiconductors, and of the low energy excitations of high-TC YBaCuO ceramics are presented herein.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144135
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The low-temperature infrared optical functions of SrTiO3 determined by reflectance spectroscopy and spectroscopic ellipsometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1235-1240 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining reflectance spectroscopy and spectroscopic ellipsometry, the complex dielectric function of SrTiO3 in the frequency range 40–5000 cm−1 at 20, 100, 200, and 300 K has been determined. Using a factorized description, analytical expressions for the optical quantities were derived, giving excellent agreement with the experimental data. These can be used for two-layer fits of films on SrTiO3, e.g., of high-Tc superconductors. The fit parameters complement very well those found at higher temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360364
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  • 3
    Electronic Resource
    Electronic Resource
    Intensity dependence of the third-harmonic-generation efficiency for high-power far-infrared radiation in n-silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 981-984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The third-harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus, the intensity dependence of the nonlinear coefficient χ(3) could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm2, at a wavelength of 676 μm a power conversion efficiency of 10−3 was reached. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358944
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Pulse buildup of the germanium far-infrared laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2205-2207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the dynamics of an electrically pumped p-Ge laser with frequency fixed to 100 cm−1 by a novel selective cavity. The growing laser power increases the pump current long before it reaches a saturating power level, an effect explained by photoionization. We further find that the laser pulse can be delayed or even quenched by injected off-resonance far-infrared radiation. This effect not only gives a gain coefficient of 0.01 cm−1 and a saturation power of 400 W−which confirms the high-power capability of the laser−but furthermore reveals a novel quasihomogeneous broadening of the gain spectrum caused by transit-time effects of rapidly moving holes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105235
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  • 5
    Electronic Resource
    Electronic Resource
    Contrast of microwave near-field microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2667-2669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Constant-height scanning is demonstrated to improve near-field microscopy by eliminating artifacts connected with topography scanning, hence, to image the inherent electromagnetic contrast. Microwaves are chosen for this study because the long wavelength eliminates coherence artifacts, owing to a scale separation of wave and image frequencies. Measured amplitude and phase images of conductive films are quantitatively analyzed by considering the longitudinal electric near field. The observed spatial resolution of 200 nm equals the probing tip size and proves that the skin depth δ of the tip material (here, 1600 nm) presents no resolution limit to scanning optical microscopy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119255
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  • 6
    Electronic Resource
    Electronic Resource
    Infrared conductivity mapping for nanoelectronics (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3980-3982 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With ever shrinking dimensions in microelectronics, the conductivity performance of charge carriers approaches physical limits and demands tighter control. We show that near-field microscopy carried out at sufficiently long infrared wavelengths—below the plasma frequency—selectively detects and characterizes subsurface mobile carriers with 30 nm resolution, timely for next generation chips as well as for fundamental research, e.g., on low-dimensional electron systems. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330756
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  • 7
    Electronic Resource
    Electronic Resource
    Material-specific mapping of metal/semiconductor/dielectric nanosystems at 10 nm resolution by backscattering near-field optical microscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 25-27 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that three main constituents of nanosystems—metals, semiconductors, and dielectrics—can be categorically distinguished by their specific optical near-field contrast at 633 nm wavelength. The decisive property is the local dielectric constant as we show by calculations based on dipolar coupling theory. Experiments with Au/Si/PS(polystyrene) nanostructures using an apertureless scattering-type near-field optical microscope yield optical images at 10 nm resolution, with clear material contrast close to predicted levels. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428767
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  • 8
    Electronic Resource
    Electronic Resource
    Phonon-enhanced light–matter interaction at the nanometre scale (2002)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 418 (2002), S. 159-162 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Optical near fields exist close to any illuminated object. They account for interesting effects such as enhanced pinhole transmission or enhanced Raman scattering enabling single-molecule spectroscopy. Also, they enable high-resolution (below 10 nm) optical microscopy. The ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature00899
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  • 9
    Electronic Resource
    Electronic Resource
    Near-field probing of vibrational absorption for chemical microscopy (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 399 (1999), S. 134-137 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Identification of chemical compounds by vibrational spectroscopy at infrared wavelengths requires macroscopic samples: the spatial resolution is diffraction-limited to a scale of about half the wavelength, or about five micrometres. The scanning near-field optical microscope,, however, ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/20154
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  • 10
    Electronic Resource
    Electronic Resource
    Infrared interferometer with output proportional to phase
    Amsterdam : Elsevier
    Infrared Physics 10 (1970), S. 97-103 
    Details
    ISSN: 0020-0891
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0020-0891(70)90005-9
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