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  • 1
    Electronic Resource
    Electronic Resource
    Influence of ion irradiation damage on properties of porous silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1320-1323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 μm features were formed by selective ion implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361028
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of nanocrystallites embedded in hydrogenated amorphous silicon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6193-6196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated light-emitting nanocrystallites embedded in an a-Si:H matrix using a conventional plasma-enhanced chemical-vapor-deposition system. It was found that the photoluminescence properties are directly related to the deposition parameters. The quantum size effect model is proposed to explain the photoluminescence. Two structural prerequisites are proposed for this kind of films to exhibit effective light emission: One is an upper limit for mean crystallite size of about 3.4 nm, the other is an upper limit for crystallinity of about 30%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360778
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  • 3
    Electronic Resource
    Electronic Resource
    Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2505-2507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescent devices have been fabricated based on Ge+-implanted SiO2 films thermally grown on crystalline silicon. Both room-temperature electroluminescence and photoluminescence spectra are found to have three luminescent bands peaked at 3.1, 2.1, and 1.6 eV. The electroluminescent devices have onsets for emission under forward bias of 5 V and under reverse bias of −13 V. Its emission is stable and reproducible. Spectral analyses suggest that the electroluminescent excitation of the 3.1 eV band may be related to the impact ionization by hot electrons, whereas that of the 2.1 and 1.6 eV bands to the radiative recombination of hole-electron pairs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120102
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  • 4
    Electronic Resource
    Electronic Resource
    Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 850-852 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si ions were implanted into thermally grown SiO2 films on crystalline Si at an energy of 120 keV and with a dose of 1016 cm−2. Under an ultraviolet excitation of ∼5.0 eV, the implanted films exhibit blue luminescence with a peak of ∼2.7 eV at room temperature. The blue emission is caused by oxygen vacancies in the films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116554
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  • 5
    Electronic Resource
    Electronic Resource
    Relation between electroluminescence and photoluminescence of Si+-implanted SiO2 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4028-4032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescence (EL) from Si+ implanted SiO2 thin film prepared by thermal oxidation was compared with photoluminescence (PL) properties. Both EL and PL spectra indicate that the luminescence originate from the same three luminescence bands around 470, 600, and 730 nm. Annealing at temperatures below and above 1000 °C makes the 470 and the 730 nm bands dominate in PL spectra, respectively. The 600 nm band, which is weaker in PL, is usually the strongest in EL. The relative contributions from different luminescence bands to EL depend on annealing, but are independent of current density. The different excitation mechanisms of the 470, 600, and 730 nm luminescence bands give rise to the discrepancy between EL and PL. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365712
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence study of defects in Si+ ion implanted thermal SiO2 films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3609-3613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Point defects and structure damages in Si-implanted thermal SiO2 films were examined by photoluminescence (PL) spectra, electron spin resonance spectra, and infrared absorption spectra. Under ∼5 eV excitation, the as-implanted film had two PL bands peaked at 4.3 and 2.4 eV, respectively. After thermal annealing, the peak energy of the low-energy band shifted from 2.4 to 2.7 eV with the increase of the annealing temperature to 1100 °C, and its intensity and width, and the relative ratio between the intensities of the two PL bands changed also. The change of the ratio, and the width and peak position of the low-energy band via annealing temperature was consistent with the recovery of the implantation-induced structure damage such as densification and distortion of silicon tetrahedra. We propose that the two PL bands are due to neutral oxygen vacancies (NOVs), and the PL characteristics of the NOV defects are related to the structure damage of the SiO2 network. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366578
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence from nanocrystallites embedded in hydrogenated amorphous silicon films prepared by plasma enhanced chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 220-222 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report in this letter the observation of visible photoluminescence (PL) at room temperature from nanocrystallites embedded in hydrogenated amorphous silicon films, which are prepared in a plasma enhanced chemical vapor deposition system by using strong hydrogen-diluted silane as the reactant gas source, without any post-processing. The PL is attributed to the radiative recombination process of carriers in the nanocrystallites, and the quantum size effect is responsible for the emission above the band gap of bulk crystal Si. The critical deposition parameters of this type of film are identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111510
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  • 8
    Electronic Resource
    Electronic Resource
    Control of porous silicon luminescent pattern formation by ion implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2246-2247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method to generate luminescent patterns of porous silicon. The crystal Si samples were selectively amorphized by self-implantation through a deposited Al mask. After anodization, the porous Si formed on the crystal regions exhibits visible luminescence, while that on the preamorphized regions does not. The limit of resolution of the light-emitting patterns is about 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110541
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  • 9
    Electronic Resource
    Electronic Resource
    Intense blue emission from porous β-SiC formed on C+-implanted silicon (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2382-2384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon ions were implanted into crystal silicon wafers at an energy of 50 keV and with a dose of 1017 cm−2 followed by thermal annealing. A layer of polycrystalline β-SiC was formed beneath the sample surface. Porous nanometer structures were prepared by conventional anodization. At room temperature, the samples exhibit a blue luminescence peak at 2.79 eV (445 nm), which is higher than the energy gap of bulk β-SiC (2.2 eV), and its intensity is stronger than that of the reference porous silicon. The results could be explained by the quantum confinement effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113990
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence spectra of C60 molecules embedded in porous Si (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3471-3473 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of C60 molecules embedded in porous Si through both physical deposition and chemical coupling were measured. In addition to the PL peak of porous Si, a peak at 730 nm caused by perfect C60 molecules and other peaks at 620 and 630 nm caused by imperfect C60 molecules were observed. The peak at 620 nm measured in the sample with physically deposited C60 is induced by C60 adsorbed on the Si atoms of the pore wall, while the peak at 630 nm measured in the sample with chemically coupled C60 molecules is caused by the coupled C60 molecules. At room temperature, the PL intensity of C60 embedded in the porous Si is obviously enhanced, and the transfer of carriers from porous Si grains into adjacent C60 is considered to be responsible for the PL enhancement. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115250
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