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  • 1
    Electronic Resource
    Electronic Resource
    Raman scattering study of the longitudinal optical phonons in ZnSe–ZnS strained-layer superlattices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4270-4272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering studies were performed on ZnSe–ZnS strained-layer superlattices with different strains. In the optical phonon regime, the Raman spectra of the ZnSe–ZnS superlattices with a superlattice axis along [001] show optical phonons confined in the ZnSe well and ZnS barrier layers, and display a two-mode behavior corresponding to ZnSe-like and ZnS-like modes. We report the experimental results, by means of Raman scattering of confined longitudinal optical phonons in ZnSe–ZnS strained-layer superlattices. The Raman frequency shift dependence on the layer thickness, superlattice period, and interface strain is presented and discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360706
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  • 2
    Electronic Resource
    Electronic Resource
    Stimulated emission and laser oscillation from light-hole excitonic state in a ZnSe-Zn0.8Cd0.2Se superlattice (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2478-2481 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At 77 K, stimulated emission from n=1 light-hole excitons in a ZnSe-Zn0.8Cd0.2Se superlattice is observed and the oscillation mode properties of n=1 light-hole and heavy-hole excitons are analyzed. It is noticed that the ZnSe-Zn0.8Cd0.2Se superlattice with the shorter Fabry–Pérot cavity length d has the larger threshold excitation. The threshold of each mode has been determined using its time delay curve. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360101
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  • 3
    Electronic Resource
    Electronic Resource
    Brillouin scattering from surface acoustic phonons in a ZnSe-ZnSe1−xSx strained-layer superlattice (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7619-7620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Brillouin scattering studies were performed on ZnSe-ZnSe1−xSx strained-layer superlattices with the composition x∼0.2. We have observed scattering from longitudinal guided modes (LGM) whose velocities are determined primarily by the C11 elastic constant. From the measured velocity of the first-order LGM of the quasitransverse acoustic mode and of the quasilongitudinal acoustic mode, the C11 and C44 elastic constants in ZnSe-ZnSe1−xSx superlattice film have been observed. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357929
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  • 4
    Electronic Resource
    Electronic Resource
    Longitudinal phonon modes in a ZnSe/ZnSxSe1−x lattice-mismatched superlattice (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5905-5908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal acoustic and optical phonon modes of a ZnSe/ZnSxSe1−x (x(approximately-equal-to)0.20) lattice-mismatched superlattice, prepared with atmospheric metal organic chemical vapor deposition method, have been investigated by light scattering measurements. Despite a lattice mismatch as large as 1% between the alternating layers, the measured longitudinal elastic constants are in agreement with the calculated values of an unstrained effective medium model. Furthermore, a correlative study was made by fitting the spectra to a spatial correlation model, which reproduces line shapes of the observed confined longitudinal-optical modes without incorporating the strain effects. The results demonstrate that a combination of Brillouin and Raman spectroscopy provides a good method to determine accurately the elastic constants and strain information of the lattice-mismatched superlattices and heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358410
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  • 5
    Electronic Resource
    Electronic Resource
    Localized excitonic transitions in a ZnSe-Zn0.75Cd0.25Se double-superlattice grown by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A group of well-defined exciton transitions from the localized states were observed in ZnSe-Zn0.75Cd0.25Se double-superlattice structure. The photoluminescence and photoreflectance have been employed to study the subband transitions at low temperatures. At 1.4 K, except the two ground states and two higher subbands of n=1 light-hole and n=2 heavy-hole excitonic transitions, other four peaks (A, B, C, and D) also were observed in wider-well superlattice. Those peaks were attributed to the excitonic transitions from n=2 heavy-hole subband due to the fluctuation of well-barrier interface. Another localized excitonic transition from narrower-well superlattice appeared as increasing the modulated intensity in photoreflectance spectra. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121153
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  • 6
    Electronic Resource
    Electronic Resource
    Electric field dependent intersubband optical transitions in a ZnCdSe–ZnSe superlattice (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2074-2076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The polarization dependence of the excitonic transition in ZnSe-Zn0.8Cd0.2Se superlattices was studied by low-field electroreflection spectroscopy. A new peak observed in the lower energy side of the n=2 heavy-hole exciton E2hh at room temperature is attributed to the forbidden transition in zero field from the n=2 heavy-hole state to the n=1 electron state. This reflection change is found to be polarization dependent. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116884
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  • 7
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (0001) surface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2491-2493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Å, as evidenced by the x-ray diffraction full width at half maximum of 90 arc sec and 4.2 K donor-bound exciton peak width of 1.4 meV. The epilayers exhibit clear signatures of compressive strain, suggesting a more favorable growth mode than can be achieved on the Si-terminated surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318723
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