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  • 1
    Electronic Resource
    Electronic Resource
    Identification of a nickel double-acceptor state in indium phosphide (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1085-1087 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first successful attempt to identify the Ni impurity level in indium phosphide. Ni-doped n-type InP crystals were investigated using deep level transient spectroscopy and optical absorption. A new electron trap with energy of 0.27±0.02 eV below the InP conduction band and an electron capture cross section of 10−13 cm2 was found. In the absorption spectrum a new zero-phonon line with energy of 0.57 eV was observed. We interpret these results as an observation of a Ni2+/Ni+ double acceptor level and an optical intracenter transition 2T2→2E within the Ni+(3d9) configuration. A vacuum-referred binding energy of the nickel double acceptor state in InP determined in our experiment is in good agreement with the vacuum-referred binding energies of the nickel impurity in GaAs and GaP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101712
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Local modes of vibration in proton- and deuteron-implanted InP (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 382-384 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of optical absorption experiments on proton- and deuteron-implanted indium phosphide are reported. It is shown that these implantations produce two types of hydrogen- (or deuterium-) related defects. These defects also exist in as-grown material not intentionally doped with hydrogen. The nature of these two defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99900
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Optical and electronic properties of vanadium in gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 163-170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of vanadium doping on the electrical and optical properties of GaAs were systematically studied in melt-grown crystals prepared by the liquid-encapsulated Czochralski and horizontal Bridgman techniques and in epitaxial crystals prepared by liquid-phase electroepitaxy. By employing deep-level transient spectroscopy, Hall-effect measurements and the V2+(3d3) and V3+(3d2) intracenter optical-absorption spectra, one vanadium-related level was identified in all crystals, i.e., the substitutional-vanadium acceptor level (V3+/V2+) at 0.15±0.01 eV below the bottom of the conduction band. From the absorption measurements we conclude that the vanadium (V4+/V3+) donor level must be located within the valence band. Because of its energy position, the above level cannot account for the reported semi-insulating properties of V-doped GaAs. We observed no midgap levels resulting from vanadium-impurity (defect) complexes. The high resistivity reported for certain V-doped GaAs crystals must result from indirect effects of vanadium, such as the gettering of shallow-level impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339174
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3459-3469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the effects of Ti doping on the electrical and optical properties of GaAs and InP has been carried out employing both melt and solution-grown crystals. Utilizing deep level transient spectroscopy, Hall effect measurements, photoconductivity, and optical absorption measurements, it was found that Ti introduces two deep levels in GaAs at Ec −0.23 eV and Ec −1.00 eV which were identified as the Ti3+/Ti2+ acceptor level and the Ti4+/Ti3+ donor level, respectively. In InP the Ti4+/Ti3+ donor level was found near midgap at Ec −0.63 eV, while the Ti3+/Ti2+ acceptor level was found to lie within the conduction band. As a consequence of the midgap position of this donor level, we developed a formulation for producing semi-insulating InP based on doping with Ti to compensate shallow acceptors. Resistivities in excess of 107 Ω cm can easily be obtained using this technique. This is the first semi-insulating III-V compound having a compensation mechanism based on a deep donor impurity. In view of the fact that Ti is expected to have a very low diffusivity in InP, Ti-doped semi-insulating InP should exhibit far greater thermal stability than Fe-doped InP and thus it should prove technologically significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342614
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: "Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP'' [J. Appl. Phys. 65, 3459 (1989)] (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 2768-2768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344502
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    Paper (German National Licenses)
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