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  • 1
    Electronic Resource
    Electronic Resource
    Formation of copper patterns on poly(tetrafluoroethylene) via radiation controlled chemical etching and chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5941-5947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterned copper films have been deposited on poly(tetrafluoroethylene) (PTFE) in a three-step additive process. In the first step, a pattern is produced by cross linking the PTFE surface in selected areas by irradiation with either electrons or x rays at dose levels below those that are either visually or spectroscopically apparent. The pattern is then developed by wet chemical etching in the second step in which only the nonirradiated areas are appreciably etched with sodium naphthalenide. In the final step, chemical-vapor deposition using the precursor (hexafluoroacetylacetonato) Cu(I) trimethylphosphine at 200 °C results in Cu deposition only on the nonirradiated areas of the surface. The Cu films are continuous with a resistivity of 4 μΩ cm, high purity as determined by Auger electron spectroscopy and x-ray photoelectron spectroscopy, and are sufficiently adherent to survive a Scotch tape test. Patterned feature sizes as small as 35 μm can be produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351902
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray-diffraction characterization of silicon-on-insulator films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4760-4769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon-on-insulator layers produced by the processes of oxygen implantation into single-crystal silicon substrates, zone melt recrystallization of deposited polysilicon films, and silicon epitaxy on sapphire substrates have been examined by an improved x-ray-diffraction technique. The technique incorporates a position-sensitive x-ray detector placed on the 2θ arm of a conventional double-crystal diffractometer, thus allowing the measurement of scattered x-ray intensity in both the incident and diffracted x-ray beam angles simultaneously. X-ray scattering intensity maps plotted in k space reveal the relative strain and mosaic spread of the silicon overlayers with respect to the (001) silicon substrates. Oxygen-implanted films and graphite strip recrystallized films exhibit mosaic spreads (〈±0.08° and ±0.05°, respectively) approaching that of bulk single-crystal Si. The electron-beam-recrystallized films exhibit significantly larger mosaic spreads (≈±0.52°). These silicon overlayer films all exhibit similar perpendicular strain values with an average of approximately 0.08%. Silicon layers produced by both zone melt recrystallization techniques contain a preferential tilt of the diffraction planes along the recrystallization scan direction with respect to the underlying (001)-oriented silicon substrate. Silicon-on-sapphire samples exhibit both a large mosaic spread (±0.18°) and a large perpendicular strain (0.13%). These x-ray results are consistent with crystalline data taken by backscattered electron images and Rutherford ion backscattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349068
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  • 3
    Electronic Resource
    Electronic Resource
    Gibberellin-delayed senescence and essential oil changes in the Navel orange rind (1969)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 17 (1969), S. 807-809 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60164a035
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  • 4
    Electronic Resource
    Electronic Resource
    Precipitate-hardened aluminum alloys formed using pulsed laser deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1116-1122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high-strength alloys of Al have been formed by pulsed laser deposition (PLD) from Al and Al2O3 targets. The deposition is alternated between the two targets, with the ratio of pulses per target controlling the O content, and the amount of each element deposited in a cycle kept low enough that the final material is uniform in composition and has a highly refined microstructure. A fine, uniform dispersion of ∼1-nm-diam γ-Al2O3 precipitates is formed in fcc Al, with an overall composition of up to 33 at. % oxygen. This microstructure is very similar to one that we previously synthesized by using ion implantation of O into Al, where nanoindentation testing revealed yield stresses of ∼1 GPa or more. Nanoindentation testing of these new PLD materials shows yield stresses as high as 5.1 GPa, greatly exceeding the strengths of aerospace Al alloys and even high-strength steels. The key to the properties of these materials is the dispersion of small, hard precipitates spaced only a few Burgers vectors apart; dislocations are apparently unable to cut through and must bow around them. While the nature of ion implantation limits both its cost effectiveness and the thickness of the layers that can be formed, PLD is a completely new approach with major advantages over implantation, including greater control of the composition versus depth, deposition on arbitrary substrates to any thickness, and scalability of the process to larger areas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360910
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  • 5
    Electronic Resource
    Electronic Resource
    Mechanical properties of nickel ion-implanted with titanium and carbon and their relation to microstructure (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1256-1264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dual ion implantation of titanium and carbon into nickel was shown to produce an amorphous layer with exceptionally high strength and hardness and substantially improved tribological properties. Indentation testing at submicrometer penetrations combined with finite-element modeling permitted quantification of the intrinsic elastic and plastic properties of the amorphous layer, which was found to have a yield strength near 5 GPa. During unlubricated sliding contact with a steel pin, the implantation treatment reduced friction, suppressed adhesion-and-fracture wear, and reduced wear depth. These tribological effects may enhance the performance and lifetime of microelectromechanical systems constructed from nickel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366823
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  • 6
    Electronic Resource
    Electronic Resource
    Extreme precipitation strengthening in ion-implanted nickel (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6547-6556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precipitation strengthening of nickel was investigated using ion-implantation alloying and nanoindentation testing for particle separations in the nanometer range and volume fractions extending above 10%. Ion implantation of either oxygen alone or oxygen plus aluminum at room temperature was shown to produce substantial strengthening in the ion-treated layer, with yield strengths near 5 GPa in both cases. After annealing to 550 °C the oxygen-alone layer loses much of the benefit, with its yield strength reduced to 1.2 GPa, but the dual ion-implanted layer retains a substantially enhanced yield strength of over 4 GPa. Examination by transmission electron microscopy showed very fine dispersions of 1–5 nm diameter NiO and γ-Al2O3 precipitates in the implanted layers before annealing. The heat treatment at 550 °C induced ripening of the NiO particles to sizes ranging from 7 to 20 nm, whereas the more stable γ-Al2O3 precipitates were little changed. The extreme strengthening we observe is in semiquantitative agreement with predictions based on the application of dispersion-hardening theory to these microstructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371620
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  • 7
    Electronic Resource
    Electronic Resource
    Metastable Al-Mn phases formed by ion-beam mixing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1756-1758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phases produced by ion-beam mixing of Al/Mn layers were examined as a function of mixing temperature between 30 and 200 °C for 16 at. % Mn. After intermixing of the layers at either 30 or 60 °C with 1×1016 Xe/cm2 at 400 keV, electron diffraction showed amorphous phase formation. However, ion-beam mixing at 100 or 200 °C produced the icosahedral Al(Mn) phase. The crystalline phase Al6Mn can also be formed near the sample surface by ion mixing appropriate concentrations at elevated temperatures. Annealing at successively higher temperatures produced the transformation sequence: amorphous → icosahedral → Al6Mn, which indicates that the icosahedral phase is more stable than the amorphous phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336441
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  • 8
    Electronic Resource
    Electronic Resource
    Silicon-on-insulator structures formed by a line-source electron beam: Experiment and theory (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2584-2592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A line-source electron beam has been used to melt and recrystallize isolated Si layers to form Si-on-insulator structures. Heat flow calculations for these layered structures have been developed which correctly predict the observed recrystallization. Using sample sweep speeds of 100–600 cm/s and peak power densities up to 75 kW/cm2 in the 1×20-mm beam, we have obtained single-crystal areas as large as 50×350 μm. Seed openings to the substrate are used to control the orientation of the regrowth and the heat flow in the recrystallization film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335887
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  • 9
    Electronic Resource
    Electronic Resource
    Thick stress-free amorphous-tetrahedral carbon films with hardness near that of diamond (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3820-3822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a process for making thick, stress-free, amorphous-tetrahedrally bonded carbon (a-tC) films with hardness and stiffness near that of diamond. Using pulsed-laser deposition, thin a-tC films (0.1–0.2 μm) were deposited at room temperature. The intrinsic stress in these films (6–8 GPa) was relieved by a short (2 min) anneal at 600 °C. Raman and electron energy-loss spectra from single-layer annealed specimens show only subtle changes from as-grown films. Subsequent deposition and annealing steps were used to build up thick layers. Films up to 1.2 μm thick have been grown that are adherent to the substrate and have low residual compressive stress (〈0.2 GPa). The values of hardness and modulus determined directly from an Oliver–Pharr analysis of nanoindentation experimental data were 80.2 and 552 GPa, respectively. We used finite-element modeling of the experimental nanoindentation curves to separate the "intrinsic" film response from the measured substrate/film response. We found a hardness of 88 GPa and Young's modulus of 1100 GPa. From these fits, a lower bound on the compressive yield stress of diamond (∼100 GPa) was determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120515
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  • 10
    Electronic Resource
    Electronic Resource
    Kinetics and morphology of erbium silicide formation (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3747-3757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth kinetics and surface morphology of erbium silicide formation from Er layers on Si(100) substrates are examined using both fast e-beam annealing and furnace annealing. Very smooth erbium silicide layers have been grown using a line-source e beam to heat and react the Er overlayers with the substrate. This contrasts to the severe pitting observed when Er layers are reacted with Si in conventional furnace annealing. The pitting phenomenon can be explained by a thin contaminant layer at the interface between Er and Si. Our results suggest the contamination barrier is not due to oxygen, as usually assumed, but may be related to the presence of carbon. Rapid e-beam heating to reaction temperatures of ∼1200 K permits dispersion of the barrier layer before substantial silicide growth can occur, allowing smooth silicide growth. Heating to shorter times to just disperse the interface barrier allows uniform layer growth by subsequent furnace annealing and has permitted measurement of the kinetics of erbium silicide formation on crystalline Si. The reaction obeys (time)1/2 kinetics but is shown to be not totally diffusion limited by the ability to sustain multiple interface growth from a single Si source. The growth rates are nearly an order of magnitude slower for the Er/Si(100) interface than for the Er/amorphous-Si, but with a similar activation energy near 1.75 eV in both cases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335640
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