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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 635-642 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work we systematically study the ion energy distribution functions (IEDFs) in argon discharges produced by a combination of pulsed (1–2 kHz) microwave (MW) and continuous wave (cw) radio frequency (rf) excitations. We show that the IEDFs for the pulsed MW discharges are structured, with individual features originating from different periods of the pulse. In the dual-mode MW/rf discharge, significant modulation of the self-bias voltage, Vb, during the MW pulse cycle is observed, which we attribute to changes in the overall plasma impedance: We demonstrate that in the pulsed-MW/cw-rf mode the impedance is highly resistive when the MW signal is on, while it is predominantly capacitive during the period between individual pulses. Using the measured time evolution of Vb in combination with time-resolved measurements of individual ion species, IEDFs at the rf-powered electrode at each instant of the MW pulse have been obtained. This approach is then used to reconstruct the total IEDF in pulsed-MW/cw-rf plasma in order to determine the total energy delivered by the impacting ions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5754-5759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work we study the growth of diamond in a dual-mode microwave/radio frequency plasma. We investigate the effect of the thickness of predeposited hydrogenated amorphous carbon (a-C:H) films and of ion bombardment on the nucleation process and on the crystal quality. The deposits are characterized by x-ray photoelectron spectroscopy (XPS) and by scanning electron microscopy. The XPS spectra of the C(1s) carbon peak and of the plasmon features confirm the presence of an amorphous, carbonaceous phase and of silicon carbide on the surface. Radio frequency biasing during the initial stage of diamond growth leads to a lower crystal quality, but to a higher nucleation density (ND). Without biasing, good quality, predominantly (100) oriented diamond crystals are obtained on a Si(100) surface. The ND values are found to increase with the thickness of the predeposited a-C:H layer. Evolution of the nucleus size distributions indicates that the a-C:H film contributes to the carbon supply, enhancing the nucleation efficiency and shortening the incubation time of seed crystals. Before a continuous layer is formed, the growth of crystals is determined by the interaction with the gas phase as well as by the amount of carbon available on the surface.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3290-3298 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition of thin diamond films on silicon (Si) substrates and in a reactor with fused silica walls can lead to the incorporation of Si impurities. In the present work, impurities in the bulk of the films were analyzed quantitatively using complementary diagnostic techniques (elastic recoil detection, electron microprobe analysis and secondary ion mass spectrometry), while surface analysis was achieved with x-ray photoelectron spectroscopy. The Si contamination level in the bulk reaches up to 0.16 at. %. We show that the presence of Si impurities correlates with the fluorescence background that accompanies the 1332 cm−1 diamond peak in the Raman spectra. Experiments were performed to distinguish between the Si originating from the wall and from the Si substrate. The effect of O2 added to the process gases is also investigated. The diamond films were prepared in a recently developed plasma reactor using a novel configuration of surface-wave-sustained discharge: the reactor operation is akin to that of the well-known plasma-ball systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4855-4858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion energy distribution functions (IEDF) were measured at the surface of a grounded or a rf-powered electrode exposed to a microwave (MW, 2.45 GHz) or a rf (13.56 MHz) discharge in argon. The IEDFs measured on the grounded electrode in both the rf and the MW modes show a higher contribution of low-energy ions when the pressure is raised. The maximum ion energy Em decreased from 12.0 to 8.5 eV in the MW plasma, but remained at 26±0.5 eV in the rf plasma. The mean ion energy E¯ decreased from 6.1 to 3.8 eV (MW) and from 16.0 to 12.0 eV (rf) when the pressure was raised from 30 to 210 mTorr. The IEDFs in the rf mode exhibit a single peak, while a bimodal structure is observed in the MW mode. When the electrode is rf powered to achieve a negative dc bias voltage VB, the Em values reach ∼1.2eVB (rf) and ∼1.1eVB (MW), respectively. The IEDFs in the rf mode display a multiple peaked structure which is associated with a rf-modulated sheath. In the dual-frequency MW/rf mode the IEDF is single peaked, narrow, and centered around eVB. A nearly tenfold increase in the ion flux is observed when increasing the MW input power, while the ion energy remains unchanged for a constant VB value. This allows an independent control of ion energy and ion flux, suitable for the control of material properties in plasma processing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2645-2647 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films have been deposited in a "dual frequency mode'' plasma, in which differing amounts of radio frequency (rf, 13.56 MHz) power were applied to the substrate, while sustaining the plasma with constant microwave (2.45 GHz) power. We report results pertaining to deposition of silicon oxide and organosilicon thin films. The rf-induced negative dc self-bias voltage is shown to affect plasma-chemical reactions, causing very significant changes in the deposition rate, film composition, and dielectric properties of the resulting materials. This provides a powerful new technique for producing "tailored'' films, while preserving the important advantages of high deposition rates and low substrate temperatures.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface & Coatings Technology 53 (1992), S. 275-282 
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface & Coatings Technology 58 (1993), S. 45-55 
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 39 (1989), S. 19-22 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 39 (1989), S. 23-25 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Vacuum 39 (1989), S. 13-15 
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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