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  • 1
    Electronic Resource
    Electronic Resource
    Spatially resolved exciton trapping in a voltage-controlled lateral superlattice (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 154-156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With spatially resolved photoluminescence experiments we demonstrate voltage-controlled trapping of excitons in a submicron scale lateral potential superlattice imposed on a semiconductor quantum well. The potential modulation is achieved by two interdigitated field-effect electrodes on top of the sample surface. Both parallel and vertical electric field components strongly modify the optical properties of the quantum well. We show that the lateral modulation of the strength of the quantum confined Stark effect results in an effective lateral exciton potential that can be probed by spatially resolved measurements of the excitonic luminescence. We demonstrate that excitons may be confined to the regions of strongest vertical fields, in which the effective exciton energy is lowest. Spatial resolution of the observed photoluminescence signal allows for a qualitative understanding of the exciton transport and trapping process. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121740
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  • 2
    Electronic Resource
    Electronic Resource
    Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the dot with source and drain. The in-plane gates are used to tune the tunnel junctions and to change the electrostatic potential of the dot. A large charging energy of 5 meV and clear Coulomb-blockade oscillations are observed at helium temperature, due to a small dot capacitance of about 3×10−17 F. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118969
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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