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  • 1
    Electronic Resource
    Electronic Resource
    Approach to study the relation between optical energy gap and hydrogen concentration in hydrogenated amorphous silicon thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4709-4711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using experimental plasmon loss energy of a-Si the number of valence electrons per unit volume in amorphous silicon thin films is determined. The characteristics of hydrogen incorporation in silicon network is studied by a quantitative model assuming that the structure of a good quality a-Si:H thin film dominantly consists of Si–H and Si–Si bonds only. Using the concept of Penn gap and bond polarizability, we have derived an expression for the optical energy gap as a function of hydrogen concentration for a-Si:H thin films. The calculated results, thus, obtained agree very well with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352742
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Lithium–fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phenyl-substituted polymer electroluminescent (EL) devices using an insulating lithium–fluoride (LiF) layer between indium tin oxide (ITO) and poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT) hole transporting layer have been fabricated. By comparing the devices made without this layer, the results demonstrate that the former has a higher EL brightness operated at the same current density. At a given constant current density of 20 mA/cm2, the luminance and efficiency for devices with 1.5 nm LiF-coated ITO were 1600 cd/m2 and 7 cd/A. These values were 1170 cd/m2 and 5.7 cd/A, respectively, for the same devices made with only an ITO anode. The ultrathin LiF layer between ITO and PEDOT modifies the hole injection properties. A more balanced charge carrier injection due to the anode modification by an ultrathin LiF layer is used to explain this enhancement. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396819
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    Paper (German National Licenses)
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