ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We compare the on-state and switching performance of high-voltage 4H-SiC n-channelDMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blockingvoltage, switching frequency, and current density. We determine the maximum current density eachdevice can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2.The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime inthe drift layer. The MOSFET current is essentially independent of frequency
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1143.pdf
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