ISSN:
0894-3370
Keywords:
Engineering
;
Electrical and Electronics Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
A discrete model is developed to describe the diffusion of dopant/impurity in a single semiconductor crystal during Czochralski growth. The basic diffusion mechanism is assumed to be substitutional-interstitial interchange for the impurity, together with self-diffusion of the host atoms. In particular, the model incorporates the complicated conditions that result from the simultaneous growth and diffusion taking place at the crystal/melt interface. The high temperature dependence of the process is also taken into account, together with possible vacancy production to counteract vacancy depletion. The numerical model is explicit in time, and conditions for convergence and stability are considered. Results are presented for chromium doping of growing gallium arsenide crystals, and compared with published experimental data.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/jnm.1660010203
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