Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 2233-2235
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High electron mobility transistors are sensitive to light since illumination ionizes deep donor centers and increases the drain current. In this letter the first observation of negative photoconductivity, i.e., drain current decreasing with light, will be reported. The current-voltage characteristics were enhanced by shining white light onto the devices showing negative photoconductivity.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98950
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