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  • 1
    Electronic Resource
    Electronic Resource
    Ellipsometric investigation of single crystalline Cz—Si subjected to hydrostatic pressure (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 346-349 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The application of ellipsometry to study the SiOx/Si system subjected to hydrostatic pressures up to 1.8 GPa at temperatures up to 1280 °C is described. The theoretical model of defects as the spherical disturbances of material has been assumed. The ellipsometric parameters have been analysed as a function of defects size and density and compared with data obtained by etching and x-ray methods. The applicability of ellipsometry for near-surface defect structure analysis has been discussed.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220175
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