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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 7035-7036 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 3253-3259 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The mobilities of the singly clustered ions of Li+ with constituent gases have been measured with a conventional drift tube over the E/N range 8–89 Td in N2, 10–25 Td in O2, 10–139 Td in CO, 50–348 Td in CO2, and 40–80 Td in CH4. Two methods were employed to determine the mobilities; one was a difference method and the other was based on the pressure dependence of apparent mobilities. It is found that the mobilities of each cluster ion species remain constant over most of the E/N range used and the zero-field values are 1.87±0.07 for Li+(N2)–N2 at 303 K, 1.89±0.11 for Li+(O2)–O2 at 303 K, 1.70±0.06 for Li+(CO)–CO at 303 K, 0.92±0.04 for Li+(CO2)–CO2 at 303 K, and 2.22±0.08 cm2/V s for Li+(CH4)–CH4 at 302 K, respectively. The zero-field mobilities of these polyatomic ions considerably deviate from the values of the Langevin polarization limit. They are predicted with moderate accuracy by assuming a hard sphere-r−4 potential which takes a repulsive core size into account.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7944-7957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used heat treatment to intentionally introduce various structural defects in Czochralski silicon substrates. The type, size, and number density of the induced defects were surveyed with transmission electron microscopy, and the defects were then incorporated into SiO2 films (10–50 nm thick) during thermal oxidation in dry O2. The effect of the defects on dielectric strength of the SiO2 films was examined with a time zero dielectric breakdown method. Larger platelet oxygen precipitates caused greater decreases of the breakdown field, and precipitates smaller than the SiO2 film thickness did not appreciably reduce the breakdown field. Every large platelet oxygen precipitate incorporated in the SiO2 film caused a degradation. Octahedral oxygen precipitates caused little degradation. The breakdown field was higher than 7 MV/cm and did not depend much on the SiO2 film thickness and precipitate size. We discussed possible mechanisms for the degradation due to both kinds of precipitates. Oxidation-induced stacking faults formed by a surface oxidation did not markedly reduce the breakdown field when only segments of dislocations and stacking faults were incorporated in the SiO2 film. Another serious degradation was caused by pits that were formed by dissolving octahedral oxygen precipitates in a HF solution. The breakdown field was lower for thicker oxide films, and it recovered as the pit shape became smoother during chemical etching. We proposed that this degradation was caused by a local thinning of SiO2 film due to stress generated in the oxidation of pits. These results suggest that voids rather than the other reported grown-in defects play the most important role in the degradation observed for as-grown silicon. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 36 (1971), S. 3733-3736 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 138-140 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An easy method to prepare alkali ion emitters has been realized by using the ion-exchange technique. The thermionic emission characteristics of zeolite A alkali ion sources have been studied. Experimental results indicate that ion transport process within zeolite plays an important role in the emission mechanism.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 303-305 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the effect of bulk microdefects (BMD) intentionally introduced in Czochralski silicon substrates by heat treatment on the dielectric breakdown of thermally grown SiO2 films. Transmission electron microscope observations reveal that the BMD consist of oxygen precipitates, perfect dislocation loops, and faulted dislocation loops. When the BMD are incorporated into the SiO2 film during thermal oxidation, an apparent decrease in the breakdown field is observed. The size of the oxygen precipitates has a clear relationship with the breakdown field: larger oxygen precipitate causes greater degradation. The dislocation loops are unrelated to the breakdown field.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3031-3034 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ion mobility measurements were made for Li+ in Ne and in N2 and Na+ in SF6 using a variable-temperature drift tube. The measurements were made by two different methods: variable-E/N method at constant T and variable-T method at constant E/N, where E, N, and T are the electric field strength, the gas number density, and the gas temperature, respectively. Two datasets were compared at the same effective temperature Teff, as calculated from the Wannier equation. For Li+ in Ne, the two datasets are put on a single curve in the range 150 K〈Teff〈10 000 K, indicating that the scaling rule holds well. However, for Li+ in N2 and Na+ in SF6 there exists a mobility difference between the two datasets, which is attributed to inelastic energy loss in the variable-E/N measurement. Using the modified Wannier equation developed by Viehland et al., we determined the inelastic energy loss factor for Na+ in SF6. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4080-4080 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the design of ion-implanted propagation tracks with a 2-μm period. Reducing cell size causes increased drive field and margin degradation due to adjacent loop interaction. We investigated the effect of ion-implanted layer properties on these problems. Using conventional photolithography, we fabricated propagation tracks on YSmLuCaGeFeO films with 0.5–0.7 μm bubble diameters by triple implantation of hydrogen and neon ions. After implantation, we exposed the wafers to argon plasma to increase the implantation-induced anisotropy field change (ΔHk), then coated them with rf-sputtered SiO2 film. We next annealed the coated wafers at temperatures ranging from 350 °C to 450 °C. To investigate the effect of the implanted layer thickness and its ratio to LPE film thickness, we proportionally varied the energies of triple implantation at a constant dose. The interaction between adjacent loops and the minimum drive field decreased as the implanted layer thickness decreased. Furthermore, we found that we could reduce the difference in bias field margin between the ion-implanted track and the Permalloy track by decreasing the implanted layer thickness without margin loss. This makes possible to realize high density hybrid devices. A minimum drive field of 38 Oe and bias margin of 68 Oe at a quasi-static drive field of 50 Oe have been obtained. Although the required drive field was larger than that of 4-μm-period tracks, we believe it can be reduced by optimizing LPE film properties and implantation conditions. Inside and outside turns, necessary in folded minor loops, have been successfully designed. Details of designs, including pattern shapes, will be discussed.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 6520-6529 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transport coefficients for Li+ ions in some moleculars gases have been measured over a wide range of E/N with a conventional drift tube at temperatures close to 300 K. The zero-field reduced mobilities are found to be 3.91±0.11, 4.44±0.12, 3.64±0.10, 2.46±0.07, and 3.44±0.10 cm2/V s in N2, O2, CO, CO2, and CH4 gas, respectively, and these values except in O2 gas significantly deviate from the Langevin limit. In N2, CO, and CO2 gas, the resulting mobility curves show clear minima at intermediate E/N, but the depressions in O2 and CH4 gas are slight. The drop of the zero-field values in N2, CO, and CO2 gas is explained in terms of an effective ion–quadrupole interaction which provides the r−6 attractive behavior. From the mobility calculations with using n−4–6(γ) potential, it is suggested that the depression of the mobility curve is developed by the addition of a sufficient r−6 term and is partly attributed to inelastic collisions as expected even at intermediate E/N. The experimental diffusion data are compared with the values derived from the generalized Einstein relation. For all systems, the agreement is quite good at intermediate E/N, but there are large discrepancies at other E/N. The sources of the deviation are considered to be clustering reactions and inelastic collisions at low and high field, respectively.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Histopathology 16 (1990), S. 0 
    ISSN: 1365-2559
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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