ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 °C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126570
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