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  • 1
    Electronic Resource
    Electronic Resource
    Effects of phase separation and decomposition on the minority carrier diffusion length in AlxGa1−xN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2357-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x=0 to x=0.79, in order to correlate the electrical and structural properties of the films. The diffusion length of holes in the films ranges between 0.3 and 15.9 μm, and the estimated lifetime of holes for doped samples varies between 0.2 ns and 16 μs. Different effects contribute to the observed increase in the diffusion length with increasing aluminum content. Among others, dislocations seem to be active as nonradiative recombination sites, and phase separation and decomposition as observed by TEM in Al-rich alloys lead to the formation of a spatially indirect recombination path due to the piezoelectric field in the films. Potential fluctuations associated with these phase irregularities could also give rise to electron induced persistent conductivity contributing to the increase of the diffusion length. From our experimental observations, we conclude that the silicon dopants are partially activated in Al-rich alloys, and do not influence significantly the values of the diffusion length of holes in these samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372187
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  • 2
    Electronic Resource
    Electronic Resource
    Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4868-4870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma-induced molecular beam epitaxial AlInGaN heterostructures have been characterized by spatial resolved cathodoluminescence and x-ray energy dispersive microanalysis. Competitive incorporation of Al and In has been observed, with the formation of In-rich regions, showing enhanced luminescence around surface pinholes. These island-like In-rich regions are favored by growth at lower temperature due to the higher incorporation of indium into the alloy. The elastic strain relaxation associated to pinhole formation induces preferential local indium incorporation. The diffusion of carriers to these areas with reduced band gap enhances the luminescence emission of the quaternary film. The width and intensity of the luminescence appear to be sensitive to the mismatch between the quaternary film and the GaN layer below. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1407849
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  • 3
    Electronic Resource
    Electronic Resource
    Cathodoluminescence study of ArF excimer laser-induced planarization of large grain diamond films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8118-8120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planarization of large grain diamond films has been induced by 193 nm excimer laser irradiation. Secondary emission images and cathodoluminescence (CL) in the scanning electron microscope have been used to characterize the irradiated area. Irradiation causes changes in the structure of defects involving nitrogen and vacancies. Evolution of the CL signal with the number of pulses indicates that the luminescence intensity tends to stabilize when a smooth film surface is obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362371
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  • 4
    Electronic Resource
    Electronic Resource
    Cathodoluminescence and photoluminescence in the core region of Bi12GeO20 and Bi12SiO20 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7186-7190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence and photoluminescence of Bi12SiO20 and Bi12GeO20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is the predominant feature in the core emission. The evolution of this band during electron irradiation suggests possible emission mechanisms. In addition, two infrared emissions at about 915 and 1390 nm are detected. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361434
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  • 5
    Electronic Resource
    Electronic Resource
    Luminescence study of structural changes induced by laser cutting in diamond films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3353-3356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of laser cutting on the structure of a chemical vapor deposited diamond film has been investigated by cathodoluminescence (CL) in the scanning electron microscope. The variation of particle morphology and CL spectra as a function of the distance to the cutting edge is described and possible laser induced structural changes are discussed. At the damaged region total CL emission increases and nitrogen-vacancy centers are detected. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359960
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  • 6
    Electronic Resource
    Electronic Resource
    Luminescence study of thermal treated and laser irradiated Bi12GeO20 and Bi12SiO20 crystals (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7948-7952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been compared to those previously reported for untreated and electron irradiated samples and recombination mechanisms responsible for some of the observed luminescence bands are discussed. Annealing of BGO samples causes the appearance of a new luminescence band at about 390 nm. The centers responsible for this band decorate the deformation slip bands in quenched BGO as observed in the cathodoluminescence images. The emission observed in BSO in the same spectral range is quenched during the annealing treatment. The annealing induced reduction of Bi ions to metallic Bi appears to be related to the quenching of a band at 640 nm observed in untreated samples. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367975
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  • 7
    Electronic Resource
    Electronic Resource
    An amalgam tattoo on the oral mucosa related to a dental prosthesis (2005)
    Oxford, UK : Blackwell Science Ltd
    Journal of the European Academy of Dermatology and Venereology 19 (2005), S. 0 
    Details
    ISSN: 1468-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A 60-year-old woman presented with a pigmented lesion on the upper left gingival mucosa of 2 years duration. The lesion was in an area where a dental metallic prosthesis had been inserted into a nearby tooth several years earlier. A biopsy of the affected mucosa showed aggregates of pigmented granules varying in size in the dermis, extracellular matrix and within macrophages; these did not stain with melanin stains. The diagnosis was consistent with an amalgam tattoo.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-3083.2004.01071.x
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  • 8
    Electronic Resource
    Electronic Resource
    Electron beam induced current and remote electron beam induced current assessment of chemical vapor deposited diamond films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1438-1443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, electron beam induced current (EBIC) has been applied to characterize several kinds of chemical vapor deposition diamond films. Regions of enhanced carrier recombination are detected in plan-view observations of thin films as well as in cross sections of thick films. Remote EBIC (REBIC) has been applied to obtain information about charged defects present in the samples. The dependence of EBIC and REBIC contrast on the contact configuration used, and on the observation conditions has been analyzed. Cathodoluminescence images of the same samples have been recorded for comparison. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369275
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  • 9
    Electronic Resource
    Electronic Resource
    Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5726-5728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354189
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  • 10
    Electronic Resource
    Electronic Resource
    Thermochemotherapy for B16 Melanoma: Combination Therapy of Hyperthermia, Melphalan, and CCNU in Mice (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Periodontology 2000 3 (1990), S. 0 
    Details
    ISSN: 1600-0757
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We studied, by means of quantitative histopathological methods, the changes that took place in B16 melanoma implanted into C57BL/6J mice after combination treatment of hyperthermia, melphalan, and 1-(2-chloroethyl)-3-cyclohexyl-1-nitrosourea (CCNU). The studies were made on animals sacrificed on days 11, 18, and 25 after implantation. Tumors in treated animals showed a progressive delay in growth, a noticeably reduced number of metastases, and diminution of prolixferative capacity. However, this treatment did not affect necrosis, stroma, capsule, or cell infiltration. Ultrastructurally, signs of cell damage were constantly present.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-0749.1990.tb00254.x
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