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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of cholesterol gallstone dissolution. Analysis of the kinetics of cholesterol monohydrate dissolution in taurocholate/lecithin solutions by the Mazer, Benedek, and Carey model (1981)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 127-129 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150602a002
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1368-1372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C-1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 A(ring). From the excitation power dependence of the photoluminescence spectra, the 1C-1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C-1HH transition, the nonradiative recombination centers were few and less than that of the D°-A (donor-acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C-HH transition energy was compared with the theoretical results using a strained model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351255
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical, microstructural, and internal friction characterization of Al/Cu thin-film reactions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2086-2093 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu/Al bilayer reactions have been studied by Rutherford backscattering, Auger depth profiling, transmission electron microscopy (TEM), and internal friction. In the later stage of the solid-state reaction Al2Cu aitch-theta phase growth occurs in a planar manner at the top of the Al film and additionally along the grain boundaries of the columnar Al grains. For the early stage of the reaction where only small amounts of Cu have diffused into the Al, internal friction proved to be the only experimental technique sensitive to Cu concentrations below 500 ppm. It was found that 300 ppm of Cu are already sufficient to shift the grain boundary relaxation peak observed by internal friction to higher temperatures compared to pure Al. This behavior reflects a rise in activation energy for grain boundary diffusion from 0.55 eV for Al to about 1 eV for the AlCu system. At higher Cu concentrations the grain boundary relaxation peak remains unaffected up to a Cu concentration of 5%, decreases for higher concentrations and is completely suppressed at 19%. This behavior is closely related to microstructural changes at the grain boundaries as observed by TEM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349444
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  • 4
    Electronic Resource
    Electronic Resource
    Composition and chemical reactions of titanium oxide films deposited by laser evaporation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3766-3768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films were deposited on Pyrex glass substrates from Ti and TiO2 targets at room temperature by laser evaporation technique. These films were characterized by scanning electron microscopy, Auger electron spectroscopy, and depth profile analysis. The films deposited from Ti target are TiCx and TiOy matrix, while films from TiO2 target are almost stoichiometric in oxygen. The films have a smooth surface morphology under a laser power density of 5 × 106 W/cm2, which is close to the critical intensity for evaporation. The interface reaction of these films is strong, and the Ti atoms diffuse into the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348473
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  • 5
    Electronic Resource
    Electronic Resource
    Collision-induced dissociation of Ni+n (n=2–18) with Xe: Bond energies, geometrical structures, and dissociation pathways (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7542-7554 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the collision-induced dissociation (CID) of Ni+n (n=2–18) with xenon is studied by using a guided ion beam mass spectrometer. Bond energies of nickel cluster ions, D0(Ni+n−1–Ni), are determined from measurements of the CID thresholds. Bond energies for neutral nickel clusters, D0(Nin−1–Ni), are derived by combining these ionic bond energies with literature values of ionization energies for Nin. Both D0(Ni+n−1–Ni) and D0(Nin−1–Ni) are found to increase nonmonotonically as a function of cluster size, with local maxima at n=3, 7, and 13 for ionic clusters and at n=6 and 13 for neutral clusters. Examination of the cluster size dependence of nickel cluster bond energies leads to speculations on the likely cluster geometric structures. Examination of the general dissociation behavior over a broad collision energy range shows that nickel cluster ions dissociate primarily by sequential atom loss, although exceptions are noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.462406
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  • 6
    Electronic Resource
    Electronic Resource
    Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110) (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5089-5092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New results which probe the nature of a defect mechanism responsible for pinning the Fermi energy within the band gap on the (110) surfaces of the 3-5 compounds are presented. From these results it is concluded that to first order the Fermi energy pinning position is independent of the fundamental difference between the Sb-GaAs chemical bond and the column 3 metal-GaAs bond. Furthermore, based on the defect mechanism for the Schottky barrier formation proposed by Spicer and Lindau, the present data can be most easily understood if the defect is more complex than a single surface lattice vacancy. Previously, investigations of column 3 metals on both n- and p-type GaAs, by photoemission electron spectroscopy, revealed a systematic difference in surface Fermi energy stabilization in the gap, with p-type samples pinning 0.25 eV below n-type samples. In the present work, it is shown that antimony, a column 5 element, yields essentially the same Schottky barrier height as the column 3 metals when adsorbed on GaAs (110). A strong similarity in the barrier height is also noted when Sb adsorption is compared to Ga adsorption on GaSb (110). The observed tendency for n-type GaSb to pin closer to the valence-band maximum than GaAs is consistent both with the Spicer/Lindau defect mechanism and with the "anion rule'' of McCaldin, McGill, and Mead. These results are important for the theory of Schottky barrier formation and for Schottky barrier device fabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335293
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  • 7
    Electronic Resource
    Electronic Resource
    Dielectric properties of material with random off-center defects: Monte Carlo simulation of relaxor ferroelectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6345-6356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Ginzburg–Landau type theory of interaction of randomly distributed local dipoles in a paraelectric crystal is developed. The interaction is caused by the polarization of the host lattice generated by these dipoles. The obtained effective Hamiltonian of the dipole–dipole interaction is employed for the Monte Carlo simulation of ferroelectric properties of a system with off-center dopant ions producing local dipoles. The computer simulation shows that at low dopant ion concentration the paraelectric state transforms into a macroscopically paraelectric state consisting of randomly oriented polar clusters. These clusters amplify the effective dipole moment and dramatically increase the dielectric constant. The interaction between the clusters results in a spectrum of relaxation time and transition to the relaxor state. The real and imaginary parts of the susceptibility of this state are calculated. At intermediate dopant concentration, the material undergoes a diffuse phase transition into a ferroelectric state smeared within a temperature range. A further increase in the dopant concentration makes the transition sharper and closer to the conventional ferroelectric transition. The results obtained are compared with the behavior of the K1−xLixTaO3 relaxor ferroelectric. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415759
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  • 8
    Electronic Resource
    Electronic Resource
    Photoinduced current generated by subband gap optical pumping for the investigation of deep levels in semiconductor lasers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 226-230 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the measurement of photocurrents induced by optical pumping at subband gap wavelengths may be a useful technique for studying deep-level traps in semiconductor lasers. In this experiment a 1.3 μm wavelength laser is used to probe a 0.78 μm wavelength GaAs laser device. The trap density of a predegraded and postdegraded device was measured. The measurement indicates a significant increase in the trap density for the degraded device over the nondegraded device. Rate equations describing this excitation process are given and are shown to describe the experiment very well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327602
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  • 9
    Electronic Resource
    Electronic Resource
    Collision-induced dissociation of Ti+n (n=2–22) with Xe: Bond energies, geometric structures, and dissociation pathways (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 4084-4093 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the collision-induced dissociation (CID) of Ti+n (n=2–22) with Xe is studied by using a guided ion beam mass spectrometer. Examination of the CID cross section behavior over a broad collision energy range demonstrates that Ti+n clusters dissociate exclusively by sequential loss of Ti atoms. Bond energies of ionic titanium clusters, D0(Ti+n−1–Ti), are determined from measurements of the CID thresholds. D0(Ti+n−1–Ti) are found to change significantly as a function of cluster size, with local maxima at n=7, 13, and 19. This pattern of highly stable cluster ions suggests that titanium cluster ions favor icosahedral structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463913
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  • 10
    Electronic Resource
    Electronic Resource
    Collision-induced dissociation of Fen+ (n=2–19) with Xe: Bond energies, geometric structures, and dissociation pathways (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 4072-4083 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the collision-induced dissociation (CID) of Fe+n (n=11–19) with Xe is studied by using a guided ion beam mass spectrometer. As previously reported for smaller iron cluster ions, these iron cluster ions dissociate exclusively by evaporation, the sequential loss of Fe atoms. Bond energies for the larger iron cluster ions D0(Fe+n−1–Fe), n=11–19, as well as updated values for the smaller cluster ions, n=2–10, are reported. These energies are derived after explicit consideration of the effect of secondary collisions between Fe+n and Xe, and of the lifetimes of the energized iron cluster ions. Bond energies for neutral iron clusters are derived by combining these ionic bond energies with literature ionization energies for Fen. Except for the dimers, we find that the bond energies of ionic and neutral iron clusters are very similar and change nonmonotonically as a function of cluster size, with local maxima at n=6, 7, 13, 15, and 19; and local minima at n=8, 14, and 18. Evidence for the existence of weakly bound isomers of iron cluster ions is also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463912
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