ISSN:
0001-1541
Schlagwort(e):
Chemistry
;
Chemical Engineering
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Chemie und Pharmazie
,
Werkstoffwissenschaften, Fertigungsverfahren, Fertigung
Notizen:
A model including the effects of diffusion and convection can be used to predict the etch rate of crystalline silicon in a plasma discharge of nitrogen trifluoride. The case of a radial flow reactor with crystalline silicon wafers located at discrete positions can be solved using a finite-element solution to a boundary value problem. Such a model is useful to predict the effects of pressure, flow rate of etchant gas, percent silicon exposed, and wafer position on both inter-and intrawafer etch rates. It was found from modeling that greater uniformity in etch rate is achieved by lowering the pressure and percent exposure of silicon, and to a lesser degree the volumetric flow rate.
Zusätzliches Material:
16 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/aic.690330713
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