ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The photoreflectance spectra for heavily doped p-type GaAs/SI-GaAs structures have been measured at room temperature for the energies in the vicinity of the GaAs band gap. The complex photoreflectance function is defined and determined by means of a Kramers–Krönig analysis from the measured photoreflectance spectra. The modulus of the complex photoreflectance function gives us the critical point energy whereas the phase of this function can be used for a topographical study of the homogeneity of the internal electric field in the structure. © 1995 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.359503
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