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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2102-2106 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electro-optic coefficient rc has been measured at low frequency in a single crystal of PbTiO3. Linear and quadratic polarization optic coefficients are derived from this value of rc and from the electric properties measured on the same crystal. Figures of merit for modulator application and the thermo-optic coefficient are determined in PbTiO3 and are compared with those in other electro-optic materials. Results show that PbTiO3 can be interesting for electro-optic applications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2251-2254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large and nonmonotonic dependences of the electro-optic (EO) coefficient r22 and the corresponding dielectric permittivity in pure LiNbO3 on the concentration of intrinsic defects related to the deviation from the stoichiometry of the crystal. This variation is caused mainly by the electro-mechanical contribution. A stoichiometric crystal possesses both large EO properties and resistance to optical damage which renders it much more suitable for use in laser Q-switching than the congruent crystal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2406-2408 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of the large utilization of LiNbO3 in optical devices, its electro-optic coefficients are not perfectly known. We show in the present paper that not taking into account the temperature dependence of the linear spontaneous birefringence can lead to an erroneous determination of the electro-optic coefficients. The electro-optic coefficient rc of LiNbO3 has been determined by an accurate technique issued from the Sénarmont method. At room temperature, rc=19.9×10−12 m/V, with an estimated error of ±5%. The measurements are performed for values of the dc applied electric field as a function of the temperature around room temperature. We point out the drastic influence on the electro-optic response of the spontaneous birefringence variation due to the temperature. Accurate and reproducible values of the electro-optic coefficients are obtained only if this dependence is taken into account.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 29 (1997), S. 441-450 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The spontaneous and electric field induced phase retardations have been measured as a function of temperature in a KDP crystal using an accurate method. The plots of these retardations versus temperature reveal unexpected undulations. We consider the various contributions which could be involved in these dependences, such as the thermo-optic effect, crystal dilatation and temperature dependence of the electro-optic coefficient. By means of calculations, the undulations are shown to be caused by an interference phenomenon related to light reflections on the surface of the crystal.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 61.10.-i; 77.84.Dy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We report the dependence of the unit cell parameters and the EO coefficients on Zn doping in optical-damage-resistant LiNbO3:Zn crystals. Both properties depend in a non-monotonic manner on the Zn content. This is accounted for by different types of Zn ion incorporation into the lattice depending on the Zn concentration in the melt. Extrema observed in the concentration dependence of the EO coefficients at about 2–3 and 6.4 mol.% Zn correlate with an unusual concentration dependence of the unit cell parameters a and c. The low-concentration anomalies may be accounted for by a decrease of the Li vacancy concentration due to the Zn incorporation into Li sites. Anomalies at high concentrations are obviously due to a partial incorporation of Zn ions on Nb sites, which is reflected in the structure data. Anomalies in the concentration dependence of other optical properties at about 6–7 mol.% Zn reported recently are obviously related to a change in the localization of the Zn ions. The combination of high EO coefficients with a reduced optical damage for these concentrations make these crystals attractive for applications as Q-switching or electrooptical modulation.
    Type of Medium: Electronic Resource
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