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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3593-3598 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the aging behavior of atomic layer epitaxy (ALE) ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices is undertaken by monitoring the internal charge-phosphor field (Q-Fp) and capacitance-voltage (C-V) characteristics as a function of aging time. The electrical properties of ALE ZnS:Mn ACTFEL devices are asymmetrical with respect to the applied voltage pulse polarity; the aging characteristics of such devices are also asymmetric. The electrical asymmetries are attributed to differences in the interface state densities at the top and bottom phosphor/insulator interfaces. The presence of Cl at the indium tin oxide interface and its tendency to migrate into the ZnS during aging is believed to be the major cause of the observed asymmetrical aging characteristics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 744-746 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal charge versus phosphor field (Q–Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q–Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may be readily deduced from a Q–Fp plot.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5575-5581 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical response of ZnS:Mn alternating-current thin-film electroluminescent devices grown by atomic layer epitaxy (ALE) is studied by systematically varying the characteristics of the standard driving waveform. Charge-voltage, capacitance-voltage, and internal charge-phosphor field analysis are used to accomplish electrical analysis. The turn-on voltage, polarization charge, conduction charge, leakage charge, relaxation charge, preclamping interface state density, and steady-state phosphor field are all monitored as a function of the driving waveform for both polarities. The electrical response is found to be asymmetric with respect to the polarity of the applied voltage pulse; this asymmetry is attributed to an asymmetry of the interface state density and to the existence of space charge within the ALE-grown phosphor layer.
    Type of Medium: Electronic Resource
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