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  • 1
    Electronic Resource
    Electronic Resource
    Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputtering (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 736-741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) thin films have been epitaxially grown on the c plane of sapphire by rf-planar magnetron sputtering. The sputtering conditions were investigated to obtain epitaxial and transparent films. Dielectric, piezoelectric, and electro-optic properties of the films were measured. Piezoelectricity of the PLZT(28/0/100) film was confirmed and was as strong as that of BaTiO3. Excellent quadratic electro-optic effects for PLZT(28/0/100) and PLZT(9/65/35) films and a linear electro-optic effect for PLZT(21/0/100) film were observed at 0.633-μm wavelength. Epitaxial PLZT thin film on sapphire is presently the most promising material for new functional devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337423
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy of Nd2−xCexCuO4−y (x=0 and 0.15) thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1229-1232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structure of Nd2−xCexCuO4−y (x=0 and 0.15) thin films was examined by x-ray photoelectron spectroscopy. The films were prepared by rf magnetron sputtering and successive annealing under reducing condition (reduction). The reduced films showed semiconducting and superconducting behaviors depending on the value x. The Cu, O, and Nd core-level spectra revealed that the doped electrons were predominantly in CuO2 plane of the Nd2CuO4 crystal. The Cu core-level spectra from x=0.15 films before and after the reduction suggested that the reduction added electrons to Cu4s-O2p extended conduction band, and strengthened Cu O bond covalency to screen the core hole state by mobile itinerant electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346722
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  • 3
    Electronic Resource
    Electronic Resource
    Highly oriented superconducting Tl-Ca-Ba-Cu oxide thin films with 2-1-2-2 phase (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 919-921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the Tl-Ca-Ba-Cu-O system with 2-1-2-2 phase have been prepared stably on MgO substrates by rf magnetron sputtering and post-annealing. The post-annealing of the films was carefully carried out in order to reduce the effect of evaporation of Tl. The annealed films showed a c-axis-oriented structure perpendicular to the substrates. The highest zero-resistance temperature of the films was 102 K. The highest critical current density obtained so far was 1.2×105 A/cm2 at 77 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100159
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  • 4
    Electronic Resource
    Electronic Resource
    Superconducting (Nd,Ce)2CuO4 thin films grown by rf magnetron sputtering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2713-2715 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of an electron-doped-type (Nd,Ce)2CuO4 system have been prepared by rf magnetron sputtering and subsequent annealing. The films showed a highly oriented structure with the c axis normal to the film plane. They exhibited superconductivity after the reducing treatment by heating at 800–900 °C in vacuum. The resistivity of the films was fairly low with metallic characteristics, and the sign of the Hall coefficient was negative in the normal state. The sharp superconducting transition with zero resistivity at 22 K was observed for the film of Nd/Ce/Cu:1.855/0.145/1.2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101548
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature process for the preparation of high Tc superconducting thin films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2263-2265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have established the low-temperature process for the preparation of high Tc superconducting films by rf magnetron sputtering. The films were deposited at a temperature (650 °C) lower than the tetragonal-orthorhombic transition point with sufficient crystallizing and oxidizing conditions. The as-deposited Er-Ba-Cu-O film on MgO exhibited a sharp superconductive transition with zero resistance at 86 K. This process prevented diffusion at the film and substrate interface and reduced the porous structure in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98904
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  • 6
    Electronic Resource
    Electronic Resource
    Highly oriented Hg-Ba-Ca-Cu-O superconducting thin films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3628-3629 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hg-Ba-Ca-Cu-O thin films have been prepared on SrTiO3(100) substrates by rf-magnetron sputtering and subsequent annealing. The annealing treatment was carried out in a Hg-free atmosphere at the relatively low temperature of 650–700 °C. The films showed a highly oriented structure with the c axis of the Hg-1201 phase perpendicular to the substrates. The Hg-Ba-Ca-Cu-O films exhibited a sharp superconducting transition at around 85 K, and a resistivity anomaly at the higher temperature of 130 K was observed for some films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110070
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure and properties of (Sr, Ca)CuO2/(Sr, Ca)RuO3 multilayers (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 737-741 
    Details
    ISSN: 1572-9605
    Keywords: Multilayer ; thin film ; infinite layer ; (Sr, Ca)CuO2 ; (Sr, Ca)RuO3 ; TEM
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial multilayer thin films of “infinite-layer” (Sr, Ca)CuO2 and perovskite (Sr, Ca)RuO3 have been prepared on (100) SrTiO3 substrates by multitarget rf magnetron sputtering. X-ray diffraction analyses revealed that the multilayer structure of (Sr, Ca)CuO3/(Sr, Ca)RuO3 was successfully fabricated with a minimum layer thickness of 20 Å. Transmission electron microscopy measurements of the multilayers indicated that there was no dislocation which normally exists in single-layer films with an infinite-layer structure. Resistivities of multilayer films at room temperature ranged from 1 to 10 mΩ cm and showed semiconductor-like dependence against the temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00721655
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  • 8
    Electronic Resource
    Electronic Resource
    in situ Preparation of superconducting HgBa2CuO4 thin films (1996)
    Springer
    Journal of low temperature physics 105 (1996), S. 1571-1576 
    Details
    ISSN: 1573-7357
    Keywords: 74.76.Bz ; 74.72.−h
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Superconducting thin films of HgBa2CuO4 have been grown in situ by using a sputtering method for the first time. (100) SrTiO3 was used as substrates and heated between 500 ° C to 600 ° C during the film deposition. By setting the deposition conditions properly, c axis oriented HgBa2CuO4 films were grown perpendicularly to the substrate surface. It was found that Hg composition in the deposited films had close relation to the sputtering gas, namely, the oxygen partial pressure, Hg could remain in the film when the partial pressure of oxygen was lower than in the case of the other oxide superconductors such as Bi cuprates. The optimum oxygen partial pressure for the crystallized thin film ranged from 0.1 Pa to 0.01 Pa with total gas pressure of 0.6 Pa. The superconducting transition was observed at around 75K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753924
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