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  • 1
    Electronic Resource
    Electronic Resource
    Infrared multispectral detection using Si/SixGe1−x quantum well infrared photodetectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 495-497 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified p-type Si/SiGe quantum well infrared photodetector for multispectral infrared imaging applications is demonstrated. In order to improve the detector's performances we have used a SiGe emitter and a low-temperature wet passivation process that give rise to a reduced dark current, even at relatively high bias voltages. Multispectral photoresponse at the long, mid and short wavelength infrared atmospheric windows was observed. The response peaks are assigned to the various classes of intervalence band transitions in the quantum wells and in the SiGe emitter layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343498
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2232-2234 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal relaxation processes due to strain relaxation and Si/Ge interdiffusion were investigated in pseudomorphic p-type SiGe/Si quantum wells using infrared-polarization-resolved absorption spectroscopy. The samples were annealed from room temperature up to 1060 °C and intersubband transitions between the lowest heavy-hole states and inter-valence-band transitions between heavy-hole and spin-split-off hole states were utilized to probe thermal activation processes. The strain relaxation process is activated at temperatures above 750 °C and causes a decrease of the intersubband absorption and an increase of the inter-valence-band absorption. At temperatures above 940 °C, we found that a second process of Si/Ge interdiffusion causes a reduction of all absorption lines in the spectrum. We proposed a simple model that provides a qualitative explanation to the above results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124974
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    Paper (German National Licenses)
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