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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1627-1634 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We propose a new method to measure within a high accuracy both the electro-optic properties and the birefringence changes in bulk crystals. This technique is based upon the frequency doubling electro-optic modulation (FDEOM) method in which an external modulator is inserted in the experimental Sénarmont setup. We present a complete analysis of the optical response of a Sénarmont setup within Jones formulation. The FDEOM method possesses as main advantages a high accuracy and sensitivity in the measurements due to a direct determination of the electric field-induced phase retardation in the crystal under study. The measurements are recorded with an adjustment of the shape of the output beam at a frequency double the frequency of the ac applied voltage. The external modulation version of this method allows us to perform measurements with a higher modulation depth and to avoid any additional dynamical perturbation in the electro-optic crystal under study. Therefore, even small values of the electro-optic coefficients can be accurately measured. Moreover, the new method is able to measure with a high accuracy the variations of the birefringence in any crystal, even if it does not present an electro-optic effect. Some significative results in LiNbO3 point out the large advantages of the method. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2251-2254 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large and nonmonotonic dependences of the electro-optic (EO) coefficient r22 and the corresponding dielectric permittivity in pure LiNbO3 on the concentration of intrinsic defects related to the deviation from the stoichiometry of the crystal. This variation is caused mainly by the electro-mechanical contribution. A stoichiometric crystal possesses both large EO properties and resistance to optical damage which renders it much more suitable for use in laser Q-switching than the congruent crystal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2406-2408 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In spite of the large utilization of LiNbO3 in optical devices, its electro-optic coefficients are not perfectly known. We show in the present paper that not taking into account the temperature dependence of the linear spontaneous birefringence can lead to an erroneous determination of the electro-optic coefficients. The electro-optic coefficient rc of LiNbO3 has been determined by an accurate technique issued from the Sénarmont method. At room temperature, rc=19.9×10−12 m/V, with an estimated error of ±5%. The measurements are performed for values of the dc applied electric field as a function of the temperature around room temperature. We point out the drastic influence on the electro-optic response of the spontaneous birefringence variation due to the temperature. Accurate and reproducible values of the electro-optic coefficients are obtained only if this dependence is taken into account.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1920-1922 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very large electro-optic Pockels coefficient is reported in a crystal of rubidium hydrogen selenate. This new material is found to be promising for modulation applications because of its very low half-wave voltage (∼27 V) which is determined.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 29 (1997), S. 441-450 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The spontaneous and electric field induced phase retardations have been measured as a function of temperature in a KDP crystal using an accurate method. The plots of these retardations versus temperature reveal unexpected undulations. We consider the various contributions which could be involved in these dependences, such as the thermo-optic effect, crystal dilatation and temperature dependence of the electro-optic coefficient. By means of calculations, the undulations are shown to be caused by an interference phenomenon related to light reflections on the surface of the crystal.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Calculations on the optical index ellipsoid yield that in LiNbO3, a quadratic electrooptic effect free of its linear counterpart exists only for propagation along the X-crystal axis with a longitudinal electric field and in that case the quadratic coefficients R c =R 12–R 31 and R 41 are exclusively involved. Because of their low values, we have measured these coefficients using a specific novel variation of the accurate frequency-doubling electrooptic modulation (FDEOM) method. After a presentation of the theoretical formulation and practical implementation of this method, results for R c and R 41 are given and discussed in relation to theoretically expected values.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 67 (1998), S. 65-71 
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 61.72.-y
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: 3 along the ferroelectric c axis in pure and chromium-doped crystals. We have studied four series of samples with various crystal compositions and doping concentrations to separate the influence of the intrinsic defects related to the non-stoichiometry and the effect of the introduction of chromium. In pure and slightly doped crystals, the electro-optic coefficient rc shows a non-monotonous dependence on the controlled crystal composition, which reflects a similar behaviour of the corresponding dielectric permittivity. In the highly Cr-doped crystals rc displays a large decrease with increasing Cr concentration whatever the crystal composition. The results have been discussed by means of the LiNbO3 structure and the substitution site dynamics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-0649
    Keywords: PACS: 78.20.Jq; 61.10.-i; 77.84.Dy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We report the dependence of the unit cell parameters and the EO coefficients on Zn doping in optical-damage-resistant LiNbO3:Zn crystals. Both properties depend in a non-monotonic manner on the Zn content. This is accounted for by different types of Zn ion incorporation into the lattice depending on the Zn concentration in the melt. Extrema observed in the concentration dependence of the EO coefficients at about 2–3 and 6.4 mol.% Zn correlate with an unusual concentration dependence of the unit cell parameters a and c. The low-concentration anomalies may be accounted for by a decrease of the Li vacancy concentration due to the Zn incorporation into Li sites. Anomalies at high concentrations are obviously due to a partial incorporation of Zn ions on Nb sites, which is reflected in the structure data. Anomalies in the concentration dependence of other optical properties at about 6–7 mol.% Zn reported recently are obviously related to a change in the localization of the Zn ions. The combination of high EO coefficients with a reduced optical damage for these concentrations make these crystals attractive for applications as Q-switching or electrooptical modulation.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-0649
    Keywords: PACS: 78.20.JQ
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. This paper presents a review of experimental methods used to determine electro-optic (EO) coefficients in bulk materials. The techniques are based on the relations describing the electro-optic effect in one-beam-ellipsometric or two-beam-interferometric optical arrangements. The methods are classified according to the nature (dc or ac) of the electric field applied onto the sample (static or dynamic methods) and with respect of the measured physical quantity (voltage, phase retardation, light beam intensity, etc.). Theoretical analysis and considerations of practical interest are presented in the article with particular attention paid to the resulting error in the determination of the EO coefficient associated with each method. A complete analysis of advantages and drawbacks of methods is finally given as a function of different experimental parameters such as the accuracy or sensitivity, the complexity of the implementation, the signal and the physical quantity used to derive the EO coefficient. Measurements of the coefficient r c as obtained by means of the various methods on the same congruent crystal of LiNbO3, are used to support the comparison between techniques.
    Type of Medium: Electronic Resource
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