Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Measurement of bulk lifetime and surface recombination velocity by infrared absorption due to pulsed optical excitation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 519-521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Knowledge of both carrier bulk lifetime τb and surface recombination velocity S are necessary to analyze and model electron devices. In this paper, the analytical results of Luke and Cheng [J. Appl. Phys. 61, 2282 (1987)] are applied to examine excess carrier decay due to pulsed Gaussian optical excitation to extract values of τb and S under low level injection. The nondestructive, contactless measurement technique utilizes a visible pulsed laser pump beam and a CW infrared laser probe beam. Values for τb and S are obtained for a number of different Si samples. The effect of varying the pump beam frequency is examined. The technique is simple to use in the laboratory and the parameter extraction from the measured data is straightforward.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348933
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Nondestructive technique to measure bulk lifetime and surface recombination velocities at the two surfaces by infrared absorption due to pulsed optical excitation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 141-146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modeling and analysis of electron devices including photovoltaic devices requires the knowledge of the surface recombination velocities at the two surfaces of the wafer along with the bulk lifetime. In this paper, the work of Luke and Cheng [J. Appl. Phys. 61, 2282 (1987)] is extended to account for the asymmetric case of different surface recombination velocities at the two wafer surfaces. We present the analysis and discuss experimental procedures to extract the above three parameters. The contactless measurement technique is based on the transient behavior of infrared absorption due to the decay of optically excited excess carriers. In order to determine the surface recombination velocities at both surfaces, the measurements must be made with each side acting as the front surface. An example of parameter extraction is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352174
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Simultaneous extraction of bulk lifetime and surface recombination velocities from free carrier absorption transients (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2718-2720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk lifetime and surface recombination velocities at both the front and the rear surfaces are important parameters that affect the performance of solar cells. In an earlier work [G. S. Kousik, Z. G. Ling and P. K. Ajmera, J. Appl. Phys. 72, 141 (1992)], a detailed theoretical analysis for a contactless nondestructive technique to obtain these parameters is presented. Here, the experimentally measured data using this new approach was presented. Moreover, the earlier analytical work has now been extended to also provide an estimate of the sensitivity of the extracted parameters to errors in experimental measurements. Results on measurements on single crystal silicon wafers are provided as an example.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356204
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 595-597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photochemical vapor deposition of polycrystalline GaAs on synthetic fused silica is reported here. A Hg-Xe arc lamp is used as the light source with triethylgallium and arsine serving as the reactants. We report, for the first time, on a GaAs deposition process using the above-mentioned light source and reactants which is completely controlled by the light source with no deposition occurring in the absence of light. GaAs thin films of thicknesses up to 1.6 μm have been deposited. X-ray diffraction, energy-dispersive spectrometry, and optical transmittance are used to analyze these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100631
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Lifetime measurements in semiconductors by infrared absorption due to pulsed optical excitation (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1445-1447 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new contactless technique for determination of excess carrier lifetime in semiconductors is demonstrated. The technique involves measuring the change in the transmitted intensity of a continuous probe beam (hν〈Eg) as a function of time through a semiconductor sample after switching off the excitation from a pulsed pump beam (hνp〉Eg). The technique has been applied to silicon samples having different doping densities. The measured lifetime values in the range of 0.5–200 μs on both n-type and p-type silicon samples by this new technique agree well with the values obtained by the traditional photoconductive decay method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98652
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1876-1878 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characteristics of the fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C using Si2H6 as silicon precursor and CF4 as fluorine precursor were studied. The addition of fluorine into Si–O network results in a decrease in the effective oxide charges as low as 1/6 of the value for the fluorine-free silicon oxide films. It also improves the film breakdown property by significantly reducing early failures, resulting in the measured average dielectric breakdown field strength of 8.91 MV/cm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117463
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...