ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substratesby plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures havebeen fabricated and their photoresponse properties have been studied. Current-voltagecharacteristics of the structures had a very good rectifying diode-like behavior with a leakagecurrent less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn onvoltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, whenilluminated from ZnO side, was studied at room temperature and photoresponsivity of as high as0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1571.pdf
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