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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect of substrate annealing : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4957-4959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied two different types of epitaxial ferromagnetic MnAs thin films on Si (001) substrates grown by molecular beam epitaxy. When the Si substrates were annealed at a relatively high temperature (∼900 °C) and then MnAs was grown, we obtained epitaxial MnAs films with twofold crystal symmetry (type I). In contrast, when the thermal cleaning of the Si substrate was done at a lower temperature (∼600 °C), epitaxial MnAs thin films had fourfold crystal symmetry (type II). The growth plane in both types of MnAs thin films was the (1¯101) of the hexagonal MnAs. The type I MnAs films are single domain with strong magnetic anisotropy, whereas the type II MnAs films are double domain with the lack of strong magnetic anisotropy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361602
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ferromagnetic MnAs thin films on Si(001) substrates by molecular beam epitaxy. Epitaxial monocrystalline MnAs films with the growth plane of (1¯101) were obtained when the Si surface was first exposed to an As4 flux and then Mn and As4 fluxes were codeposited. It was found that the very first monolayer of As on Si(001) plays an essential role to obtain epitaxial MnAs thin films. Magnetization measurements indicate that the easy axis of the MnAs thin films is in-plane, along the [1¯1¯20] of MnAs and the [110] of Si, normal to the substrate misorientation. The M-H curve of a 300-nm-thick film shows a hysteresis with a saturation magnetization Ms of 694 emu/cm3 and a coercive field Hc of 94 Oe, when the magnetic field is applied along the easy axis. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115243
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    Paper (German National Licenses)
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