Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 1814-1816
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Double-fused vertical-cavity surface-emitting lasers (VCSELs) have demonstrated the highest temperature performance of any 1.5 μm VCSEL, but further optimization is needed to reduce their temperature sensitivity. We present and analyze threshold current measurements of these devices between −90 °C and 30 °C stage temperature. Despite a zero gain peak offset from the emission wavelength at room temperature, the pulsed threshold current has its minimum near −50 °C corresponding to about −30 nm gain offset. This is in contrast to a common VCSEL design rule. Temperature effects on the optical gain of the strain-compensated InGaAsP/InP active region are found to be the main cause for the disagreement. A design rule modification is proposed. Numerical simulation of an optimized 1.55 μm VCSEL shows that gain offset improvements are counteracted by loss mechanisms. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121318
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