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  • 1
    Electronic Resource
    Electronic Resource
    Spin transport in nanotubes (invited) (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6863-6867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study electron spin transport through carbon nanotubes contacted by ferromagnetic electrodes. The resistance of a ferromagnetically contacted multiwalled nanotube switches hysteretically as a function of applied magnetic field, with a maximum resistance change of 9% at 4.2 K. Magnetoresistance measurements of carbon nanotubes having one cobalt contact and one platinum/gold contact, however, show no switching. In addition, we present calculations of the magnetoresistance ratio for the ferromagnetic nanotube device, and predict that a resistance change of 25% is possible. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359220
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of geometric enhancement factors for silicon nanopillar cathodes using a scanning tunneling microscope (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-density silicon nanopillar cathodes were fabricated using a self-assembling colloidal gold etch mask. Scanning tunneling microscopy experiments were performed to locate individual nanopillars and to investigate their field emission properties. Emission characteristics were obtained over a range of fixed separations from the nanopillar apex, allowing the empirical determination of the geometric field enhancement factors from the resulting Fowler–Nordheim plots. The geometric enhancement factors were found to increase dramatically for decreasing anode–cathode separation and the rate of increase is dependent on the nanopillar geometry. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396821
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  • 3
    Electronic Resource
    Electronic Resource
    Operation of logic function in a Coulomb blockade device (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2515-2517 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents the experimental demonstration of a Coulomb blockade (CB) logic device. Our logic architecture consists of an array of current pathways, controlled by CB switching nodes. In this architecture, high gain is not required to transmit information, making it well suited to the CB device. Each CB node is switched between a blockaded state and a completely pinched-off state, minimizing the influence of stray potentials. Using a multi-phase clocking scheme to precisely control electron flow, the AND logic function is observed using as few as 160 electrons. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122500
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced electro-optic modulation by integration of nonradiative centers in a resonant tunneling light emitting diode (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3452-3454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We create a reservoir of hole traps in a resonant tunneling light emitting diode by etching the p-type contact into an array of nanometer scale pillars. In the off state, the charge reservoir keeps the light output extremely low, even at relatively high currents. The device can be switched on to produce light by raising the electron emitter past a confined electron state allowing holes to escape from the nonradiative region. The resulting electro-optic switch has an on/off ratio of at least 1000:1, a large improvement over conventional resonant tunneling light emitting diodes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118215
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  • 5
    Electronic Resource
    Electronic Resource
    Resistance bi-stability in resonant tunneling diode pillar arrays (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1234-1236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and characterized resonant tunneling diode pillar arrays. The array resistance switches between two stable states with a maximum room temperature current peak to valley ratio of 500:1. Both the high and the low resistance states are stable at zero bias suggesting that the device may be used for non-volatile memory storage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113247
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature current transport of Sn-GaAs contacts (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 334-336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measure low temperature current transport properties of superconducting Sn contacts to p+-GaAs. For contacts alloyed at 450 °C, the current-voltage characteristics show a strong dependence on alloying time. The critical temperature of Sn near the superconductor-semiconductor interface decreases from 3.8 to 1.8 K as the alloying time increases from 0 to 120 s. On the other hand, a long-time alloying increases the transparency of the interface. Using the Blonder, Tinkham, and Klapwijk model [Phys. Rev. B 25, 4515 (1982)], we find that the transmission coefficient of the interface increases from 0.2 to 0.7 by alloying. However, the normal state resistance calculated using the model is much smaller than the experimental value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110034
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