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  • 1
    Electronic Resource
    Electronic Resource
    Surface magnetism of epitaxial thin films by polarized electron scattering (invited) (abstract) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5931-5931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The development of spin-polarized spectroscopy techniques offers some of the most powerful probes to study the magnetic phenomena related to the interface region of free magnetic surfaces and multilayer systems. The study of the magnetic properties of surfaces and interfaces is relevant in the basic understanding of, e.g., the coupling in magnetic multilayer systems. By spin-polarized low-energy electron diffraction it has been possible to characterize such magnetic interfaces allowing to test the validity of recent theoretical models. Thus, depending on the strength of the surface magnetic coupling, different magnetic phase transitions can occur, the most spectacular one being the case when at the surface the ferromagnetic to paramagnetic transition occurs at a higher temperature than in the bulk. This phenomenon has indeed been demonstrated on Gr(0001)1 and on Tb surfaces.2 Furthermore, indications of anomalous behavior on Gd/3 leads now to consider an interpretation in the frame of the first-order phase transition predicted recently.4 The role of the interface region in the coupling between epitaxial ferromagnetic layers separated by an antiferromagnetic material has also been studied.5 Two Fe(001) films separated by a thin slab of Cr exhibit antiparallel coupling. The Cr(001) slab, however, shows no indications of the expected ferromagnetic surface sheet configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342178
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  • 2
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy as a tool to study surface roughness of sputtered thin films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4258-4261 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-dimensional image of the surface roughness of four conducting iron-oxide Fe3O4 thin films was obtained using a scanning tunneling microscope. We obtain grain size and surface roughness of films deposited on Si(100) by reactive sputtering at different substrate temperatures. The apparent grain size lies between 10 and 50 nm, and depends on the substrate temperature and film thickness. We have also determined the scanning tunneling microscopy parameters (tip size and shape) to obtain "real'' images (i.e., images without artifacts) of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343967
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation of remanently ferromagnetic Gd(0001) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2908-2913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Gd films were prepared in ultrahigh vacuum (UHV) on W(110) substrates. Cleanliness, growth mode, and surface crystallography were analyzed using Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Stranski–Krastanov growth is established by AES for a substrate temperature Ts =450 °C. The LEED patterns correspond to the hcp(0001) surface. For nominal thicknesses in the range 1(approximately-less-than)d¯(approximately-less-than)50 A(ring) a typical double diffraction interference pattern occurs. For d¯(approximately-greater-than)70 A(ring) both the satellite pattern in LEED and the W signal in AES vanish, indicating coherent film surfaces for this thickness range. The films can be remanently magnetized as shown by in situ measurements of the magneto-optical Kerr effect and by spin-polarized low-energy electron diffraction (SPLEED).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336951
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic structure of Cr overlayers on Fe(100) (abstract) : 37th annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6211-6211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Cr were grown at 200 °C on Fe(100). The magnetic order of the Cr overlayers was studied by spin polarized electron energy loss spectroscopy (SPEELS). The exchange scattering asymmetry is large (negative) for the bare Fe surface and rapidly drops with increasing Cr coverage in the submonolayer range changing sign at around one monolayer Cr. This shows directly the antiferromagnetic coupling of the first Cr layer to the Fe substrate. With further increase in the Cr thickness the exchange asymmetry oscillates with a period of about 2 layers, thus proving directly the layer-by-layer antiferromagnetic order in the Cr films. The oscillation amplitude shows variations with thickness resembling features found in the magnetic coupling in Fe/Cr/Fe sandwiches. The SPEELS spectra show a maximum in the spin flip channels around 1.9 eV. This structure broadens with increasing Cr thickness. This large spin flip energy suggests a surface enhanced exchange splitting and an enhanced Cr surface moment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352701
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-polarized electron tunneling from a ferromagnet into GaAs(110) (invited) (abstract) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5816-5816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A spin-polarized scanning tunneling microscope technique is presented. It is based on the detection on spin-polarization effects for tunneling between a ferromagnet and a semiconductor, the latter acting as a miniature spin detector. The spin detection is made by means of measuring the circular polarization of the radiation emitted from the semiconductor upon the radiative recombination of the minority carriers injected from the magnetic material, through the tunneling junction, into the semiconductor. Spin-polarized STM measurements were performed using a Ni tip and GaAs(110). We demonstrate the following effects on the spin polarization: (1) Sign change upon reversal of the magnetization of the tip. (2) Spectroscopy: polarization versus energy of the tunneling electrons. (3) Magnitude changes dependent on surface cleanliness of the tip apex. The data indicate that the polarization of the electrons tunneling from the Fermi level of Ni can have a polarization close to 50% in magnitude. This high value and the sign of the polarization indicate that 3d levels might be the dominant tunneling contribution. This has been cross-checked by experiments on Fe tips. We note that this technique intrinsically has nanometer lateral resolution determined by the diameter of the tunneling current filament. Imaging of magnetic domains would be realized by tunneling from a magnetic surface into a tip acting as the detector. The present technique is a fully new spin-polarized STM approach in that it involves tunneling from a magnetic into a nonmagnetic material. Thus, effects like magnetic forces and magnetostriction should be excluded from the interpretation of the results and from potential spin-polarized STM imaging. This might not be the case for tunneling between two magnetic materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353536
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  • 6
    Electronic Resource
    Electronic Resource
    Separation of magnetic and topographic effects in force microscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7278-7280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several techniques are presented which allow magnetic force microscopy to be performed while simultaneously mapping the surface topographic features of a magnetic sample. The separation of magnetic and topographic features measured simultaneously with a scanning force microscope is made possible by an instrument based on a differential interferometer that can detect cantilever deflections of 0.005 nm at a frequency as low as 1 Hz. Two different applications are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344511
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  • 7
    Electronic Resource
    Electronic Resource
    Bremsstrahlung isochromat spectroscopy with spin-polarized electrons (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 765-770 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the construction and operation of a UHV system for bremsstrahlung isochromat spectroscopy in the x-ray regime (1463 eV) with spin-polarized electrons. The performance of the system is illustrated with measurements on Ni(110). The implications of this new technique to study magnetic properties through the spin-resolved electronic structure of the (near) surface are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141947
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  • 8
    Electronic Resource
    Electronic Resource
    A differential interferometer for force microscopy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3131-3134 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a polarizing optical interferometer especially developed for force microscopy. The deflections of the force-sensing cantilever are measured by means of the phase shift of two orthogonally polarized light beams, both reflected off the cantilever. This arrangement minimizes perturbations arising from fluctuations of the optical path length. Since the measured quantity is normalized versus the reflected intensity, the system is less sensitive to intensity fluctuations of the light source. The device is especially well suited to static force measurements. The total rms noise measured is (approximately-less-than)0.01 A(ring) in a frequency range from 1 Hz to 20 kHz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140543
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer resolution in luminescence microscopy of III-V heterostructures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1564-1566 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103154
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  • 10
    Electronic Resource
    Electronic Resource
    Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1459-1461 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of In in the growth of crescent-shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross-sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114494
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