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  • 1
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal oxidation on electrical characteristics of chemical-vapor-deposited SiO2 gate dielectrics (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5641-5643 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, effects of rapid thermal oxidation (RTO) on electrical characteristics of thin (200 A(ring)) chemical-vapor-deposited (CVD) SiO2 have been studied. Current density-electric field (J-E) characteristics, flat-band voltage, and gate voltage shifts under constant-current stressing were also examined. Results show that RTO improves the charge trapping property of as-deposited CVD oxides. In addition, RTO of CVD oxides also increases the electron injection barrier height of the as-deposited samples at the cathode and produces devices with lower leakage current and tighter breakdown distribution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343676
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Recrystallization by rapid thermal annealing of implanted low-pressure chemical-vapor-deposited amorphous Si films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4878-4883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Si films of 4000 A(ring) were deposited using low-pressure chemical-vapor deposition and implanted with arsenic or boron at doses of 5×1013, 5×1014, and 5×1015 cm−2. These films were then rapid thermally annealed (RTA) using an Eaton Nova ROA-400 system at temperatures ranging from 900 to 1200 °C and dwell times ranging from 1 to 30 s. It was found that grain growth initiated very rapidly (less than 2 s at 1100 °C). Grain growth saturation (when grain size equals the film thickness) was reached in 5×1015 dose samples after a 1200 °C, 10-s RTA. The sheet resistance decreased with increasing RTA temperature and dwell time. Hall mobility increased with both RTA temperature and time. The temperature coefficient of resistance (TCR) was negative at low dose implants and became positive at higher dose implants. The lowest TCR was found in films implanted with medium dose. In general, 1200 °C/10-s RTA is an optimal condition for crystallization and annealing of the 5×1015 and 5×1014 cm−2 dose films while longer times are necessary for the 5×1013 cm−2 dose films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338994
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-in (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5084-5088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion-beam mixing with Si ions and low-temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal-oxide-semiconductor field-effect transistor in a self-aligned fashion and can have a significant impact on complementary metal-oxide-semiconductor devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338333
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal processing on thermal oxides of silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3360-3363 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in metal-oxide-semiconductor (MOS) devices have been studied. MOS capacitors have been analyzed by current-voltage (I-V) and constant current stress techniques. MOS field-effect transistors (MOSFETs) have been fabricated using RTP for the post-implant anneal, and the transistor degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at high temperature and/or long duration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337704
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characterization of Ti-silicided shallow junctions formed by ion-beam mixing and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 688-691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a technique for the fabrication of shallow, silicided junctions with good electrical characteristics. By the implantation of suitable impurity ions into titanium silicide layers on Si formed by ion-beam mixing and low-temperature annealing, and the subsequent diffusion of the implanted ions at high temperature into the Si substrate, shallow p+/n, n+/p, and double-diffused n+-n−/p junctions with silicide ohmic contacts have been obtained. Results of contact resistance, contact morphology, junction integrity, and carrier concentration profile are reported. The effects of implantation energy, implant dose, and annealing parameters are discussed. This technique can be easily applied to the fabrication of metal-oxide-semiconductor field-effect transistors in a self-aligned fashion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337415
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  • 6
    Electronic Resource
    Electronic Resource
    Study of electrical characteristics of polyoxides grown by rapid thermal oxdidation (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1675-1677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (∼18 nm) polyoxide films have been grown on phosphorus-implanted polycrystalline silicon (poly-Si) by rapid thermal oxdiation (RTO). With an emphasis on the bias polarity dependence, we have studied the electrical characteristics of polyoxides, such as leakage current, breakdown field, and charge trapping. In comparison with polyoxides grown in conventional furnace, RTO polyoxides exhibit a significantly reduced leakage current. In addition, the dielectric breakdown strength and breakdown field distribution have been improved. When electrons were injected from the top poly-Si/SiO2 interface, RTO polyoxide shows a reduced trapping rate. However, when electrons were injected from the SiO2/bottom poly-Si interface, RTO polyoxide shows an increased trapping rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104135
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  • 7
    Electronic Resource
    Electronic Resource
    Genetic and immunological characteristics of Type I diabetes mellitus in an Indo-Aryan population (2000)
    Springer
    Diabetologia 43 (2000), S. 450-456 
    Details
    ISSN: 1432-0428
    Keywords: Keywords Type I diabetes, Indo-Aryan, immunogenetics, HLA genes, islet-related autoantibodies.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Aims/hypothesis. Our aim was to characterise the genetic and immunological features associated with Type I (insulin-dependent) diabetes mellitus in a cohort of Indo-Aryan children resident in the United Kingdom.¶Methods. Children with Type I diabetes (n = 53), unaffected first-degree relatives (n = 146) and unrelated healthy control children (n = 54) were typed for alleles of the HLA-DRB1, HLA-DQA1 and HLA-DQB1 genes. Islet cell antibodies and antibodies to glutamic acid decarboxylase, protein tyrosine phosphatase-2 (IA-2ic) and insulin were measured in the diabetic and control children.¶Results. The DRB1*03.DQA1*05.DQB1*02 haplotype was positively associated with the disease, occurring in 78 % of diabetic children compared with 22.6 % of healthy children (p c 〈 2.4 × 10–5). In simplex families, this haplotype was transmitted more frequently to the diabetic children than to their unaffected siblings (p 〈 1 × 10–4). The DRB1*04.DQA1* 03.DQB1*0302 haplotype was also transmitted preferentially to the diabetic probands (p 〈 0.025) but was not associated with disease in the case control study. Islet-related autoantibodies were detected in 89.6 % of diabetic patients compared with 11.8 % of control children (p 〈 1 × 10–6). Although protein tyrosine phosphatase-2 autoantibodies were detected more frequently among DRB1*04-positive diabetic patients compared with patients lacking this allele, the overall frequency of these autoantibodies was lower than observed in Europid diabetic subjects. This could reflect the absence of a disease association with DRB1*04 in the Indo-Aryan cohort.¶Conclusion/interpretation. Type I diabetes in our Indo-Aryan cohort is similar to the disease observed in Anglo-Europeans but has important immunogenetic differences. The low frequency of protein tyrosine phosphatase-2 autoantibodies among the Indo-Aryan diabetic children could have important implications for the design of future strategies for disease prediction in this population. [Diabetologia (2000) 43: 450–456]
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001250051328
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