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  • 1
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1187-1192 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N2 and SiH4 gas mixtures, and N2, O2, and SiH4 gas mixtures, respectively, using the electron cyclotron resonance technique. The films were characterized by Fourier transform infrared spectroscopy (FTIR) and electron paramagnetic resonance spectroscopy. According to the FTIR characterization, the SiO2.0 films show continuous stress relaxation for annealing temperatures between 600 and 1000 °C. The properties of the films annealed at 900–1000 °C are comparable to those of thermally grown ones. The density of defects shows a minimum value for annealing temperatures around 300–400 °C, which is tentatively attributed to the passivation of the well-known E′ center Si dangling bonds due to the formation of Si–H bonds. A very low density of defects (5×1016 cm−3) is observed over the whole annealing temperature range. For the SiN1.55 films, the highest structural order is achieved for annealing temperatures of 900 °C. For higher temperatures, there is a significant release of H from N–H bonds without any subsequent Si–N bond healing, which results in degradation of the structural properties of the film. A minimum in the density of defects is observed for annealing temperatures of 600 °C. The behavior of the density of defects is governed by the presence of non-bonded H and Si–H bonds below the IR detection limit. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371996
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1906-1913 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600 °C without any change in the oxygen to silicon ratio of the films. The activation energy of the hydrogen release is in the 0.21–0.41 eV range independently of film composition, suggesting that the process occurs via network bond reactions. For annealing temperatures higher than 700 °C, a change in the Si–O–Si stretching wave number from the initial unannealed value to the 1070–1080 cm−1 range was promoted, independently of the initial film composition. Electron spin resonance measurements showed that all the films contain two type of bulk paramagnetic defects: the E′ center (•Si(Triple Bond)O3) and the silicon dangling bond center (•Si(Triple Bond)Si3). The RTA process promotes a general decrease of defect concentration for annealing temperatures below 400 °C. At higher temperatures, E′ center disappears, and the •Si(Triple Bond)Si3 center increases its concentration up to the 1017–1018 cm−3 range. This suggests that the RTA at higher temperatures promotes the formation of a high-quality, almost defect-free, SiO2 matrix in which highly defective Si nanocrystals are also formed, where the •Si(Triple Bond)Si3 centers are located. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1495068
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1573-1581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance–voltage and current–voltage characteristics) and defect spectroscopy (electron spin resonance). The SiNx:H films were deposited by an electron cyclotron resonance plasma method and subjected to rapid thermal annealing postdeposition treatments at temperatures between 300 and 1050 °C for 30 s. It is found that the response of the dielectric to the thermal treatments is strongly affected by its nitrogen to silicon ratio (N/Si=x) being above or below the percolation threshold of the Si–Si bonds in the SiNx:H lattice, and by the amount and distribution of the hydrogen content. The density of Si dangling bond defects decreases at moderate annealing temperatures (below 600 °C) in one order of magnitude for the compositions above the percolation threshold (nitrogen rich, x=1.55, and near stoichiometric, x=1.43). For the nitrogen rich films, a good correlation exists between the Si dangling bond density and the interface trap density, obtained from the capacitance measurements. This suggests that the observed behavior is mainly determined by the removal of states from the band tails associated to Si–Si weak bonds, because of the thermal relaxation of the bonding strain. At higher annealing temperatures the deterioration of the electrical properties and the increase of the Si dangling bonds seem to be associated with a release of trapped hydrogen from microvoids of the structure. For the silicon rich samples rigidity percolates in the network resulting in a rigid and strained structure for which the degradation phenomena starts at lower temperatures than for the other two types of samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380992
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  • 4
    Electronic Resource
    Electronic Resource
    Intramolecular Electron Transfer Reactions Catalyzed by .alpha.-Oxo and .beta.-Oxo Substituents in the 1-Chlorobicyclo[2.2.1]heptane System (1995)
    s.l. : American Chemical Society
    The @journal of organic chemistry 60 (1995), S. 1000-1004 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00109a035
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  • 5
    Electronic Resource
    Electronic Resource
    Public Sector Employment in Developing Countries: An Overview of Past and Present Trends (1994)
    Bingley : Emerald
    International journal of public sector management 7 (1994), S. 50-68 
    Details
    ISSN: 0951-3558
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Political Science , Economics
    Notes: The debate on the public sector has been central in structuraladjustment programmes applied in developing countries during recentyears. The common grounds of the discussion have been the size of thepublic sector, its role and its efficiency in delivering services. Thecommon criticisms of the 1980s are that the public sector is too big,overstaffed and inefficient. Examines these issues under a long-termperspective. Finds that at the aggregated level there is no clear-cutevidence to support those criticisms of the size of the public sector indeveloping countries. Compared with industrialized countries, there isno particular evidence of the public sector being too big in thedeveloping world. However, it appears that the sequence of theadjustment process has negatively affected the performance of importantparts of the public sector by distorting the proportion of wage andnon-wage expenditures, disregarding their complementarity. Theconsequent imbalance between inputs and employment has resulted inpractical overstaffing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/09513559410055233
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  • 6
    Electronic Resource
    Electronic Resource
    The tyrosine-6 hydroxyl of γδ resolvase is not required for the DNA cleavage and rejoining reactions (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 15 (1995), S. 0 
    Details
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Site-specific recombinases of the resolvase and DNA invertase family all contain a tyrosine residue close to the N-terminus, and four residues away from a serine that has been implicated in catalysis of DNA strand breakage and reunion. To examine the role of this tyrosine in recombination, we have constructed a mutant of γδ resolvase in which the tyrosine (residue 6) is replaced by phenytalanine. Characterization of the Y6F mutant protein in vitro indicated that although it was highly defective in recombination, it could cleave ONA at the cross-over site, form a covalent resolvase-DNA complex and rejoin the cleaved cross-over site (usually restoring the parental site). These data rule out a direct role of the Tyr-6 hydroxyl as the nucleophile In the DNA cleavage reaction and strengthen the conclusion that this nucleophile is the nearby invariant serine residue, Ser-10. We conclude that Tyr-6 is essential for fully coordinated strand cleavage and exchange, but is dispensable for individual strand cleavage and religation reactions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2958.1995.tb02356.x
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  • 7
    Electronic Resource
    Electronic Resource
    Wage policy in high inflation countries: The role of indexation in Latin America during the 1980s (1997)
    [S.l.] : Emerald
    Journal of economic studies 24 (1997), S. 356-378 
    Details
    ISSN: 0144-3585
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Economics
    Notes: During the 1980s Latin America's inflation problem worsened and successive stabilization programmes failed in many countries. This led to an increasing concern about the degree of rigidity imposed on the economy by different labour market structures built up over many decades. Wage indexation, in particular, was often blamed for the failure of stabilization and adjustment programmes. Examines the different components of an indexing system and assesses the degree of flexibility that the systems implemented in some countries brought to the labour market. While a particular indexing system may have the effect of reducing wage flexibility in certain periods, the analysis of data at the macro level shows that in the long term wage indexation has not been insurmountable obstacle. Stresses that wage determination is just one of the key processes with a substantial influence on inflation. In the case of high inflationary countries, the existence of various key prices draw attention to the need for co-ordination in the adjustment of different prices during the application of a stabilization programme.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1108/01443589710185914
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  • 8
    Electronic Resource
    Electronic Resource
    Die Serumlipoide unter besonderer Berücksichtigung des Plasmalogens (1957)
    Springer
    Journal of molecular medicine 35 (1957), S. 295-297 
    Details
    ISSN: 1432-1440
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Zusammenfassung Unter Cortison kommt es bei Leberkranken zu einer Hyperplasmalogenämie, wie sie auch bei Gesunden unter gleichen Bedingungen beobachtet wird. Die Gesamtphosphatide schwanken wie die Cholesterinfraktionen und die Esterfettsäuren, ohne daß sich eine Gesetzmäßigkeit erkennen läßt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01482162
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  • 9
    Electronic Resource
    Electronic Resource
    Die Serumlipoide unter besonderer Berücksichtigung Des Plasmalogens (1956)
    Springer
    Journal of molecular medicine 34 (1956), S. 1016-1020 
    Details
    ISSN: 1432-1440
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Zusammenfassung Die Leberschädigung der Ratte durch Tetrachlorkohlenstoff geht anfangs mit einem Lipoidsturz im Blutserum einher, der den Lipoidphosphor und die Esterfettsäuren betrifft. Im Gegensatz zum gesunden Tier ist durch Cortison in klinisch-therapeutischen Dosen nach Wiederanstieg der Serumlipoidwerte eine weitere Erhöhung von Lipoidphosphor und Esterfettsäuren zu erzielen. Die Vermehrung der Serumfette geht ohne Änderung des Leberfettgehaltes einher. Das Serumplasmalogen ist an den Lipoidverschiebungen nicht beteiligt, obwohl es histochemisch zu einem ausgeprägten Anstieg des Leberplasmals kommt. Zwischen Plasmalfärbbarkeit der Leberzelle und Zellnekrose bestehen direkte Parallelen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01483697
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  • 10
    Electronic Resource
    Electronic Resource
    Experimental evidence for the amino-group non-planarity in nitroanilines: neutron diffraction study of 2-methyl-5-nitroaniline at 100 K (1999)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 209-215 
    Details
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: An appreciable degree of pyramidalization of the amine N atom is observed in the title compound. The existence of polar chains, induced by N—H...O synthons, is confirmed. C—H...O interactions, not noted in a previous X-ray study, were found to stabilize further the known head-to-tail assembling of the chains. The structure can be described as non-polar (101) layers, embodying chains interlinked by centrosymmetric dimers, connected by C(aryl)—H...π interactions. The latter are not present in m-nitroaniline, 2-methyl-4-nitroaniline and other related compounds with chains built from similar N—H...O synthons and assembled head-to-head. This finding implies that an obvious relationship between molecular recognition patterns and crystal structures should not be assumed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108768198010349
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