ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We fabricate a one-dimensional constriction in a shallow, δ-doped GaAs/AlxGa1−xAs two-dimensional electron gas, by locally oxidizing the surface using an atomic force microscope. The channel exhibits ballistic conduction with up to seven conductance plateaus, quantized in units of 2e2/h. The dependence of the device conductance on dc bias voltage reveals the energy separation of the first two subbands to be ΔE1,2=5.5(±0.3) meV, which allows ballistic conduction to be observed up to a temperature of 20 K. A lateral electric field, combined with the hard-walled confinement due to the insulating lines, allows manipulation of the electron wave function in a way which is not possible with surface-gated devices. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1374225
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