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  • 1
    Electronic Resource
    Electronic Resource
    Diamond grown on single-crystal beryllium oxide (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4305-4312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond has been grown on single-crystal beryllium oxide by hot-filament chemical-vapor deposition. The diamond particles were characterized by Raman spectroscopy, and the morphology and microstructure investigated by scanning electron microscopy and plan-view and cross-sectional transmission electron microscopy. Diamond grew epitaxially on the basal plane of BeO with the epitaxial relationship {111}diamond(parallel){0001}BeO and 〈11¯0〉diamond rotated by less than 6° with respect to 〈112¯0〉BeO. Diamond was also grown on the (112¯0) prism plane of BeO. A selected-area-diffraction pattern obtained from a plan-view of these specimens indicated the presence of a set of spots that corresponded to the {101¯0} planes of hexagonal diamond or to the 1/3(422) forbidden spots of cubic diamond. During diamond deposition on (112¯0)BeO surfaces, small particles of beryllium carbide (Be2C) were also observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352813
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  • 2
    Electronic Resource
    Electronic Resource
    Orientation relationship between chemical vapor deposited diamond and graphite substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 711-715 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond was deposited on synthetic graphite, highly oriented pyrolytic graphite and on substrates covered with graphite powder. Scanning electron microscopy and transmission electron microscopy were used to examine the samples. A strong preference for nucleation of diamond on the edges of the graphite sheets was observed. The graphite and the diamond have a preferential orientation relationship in which the diamond (111) plane is parallel to the graphite (0001) plane, and the diamond [11¯0] direction is parallel to the graphite [112¯0] direction. This orientation means that the puckered hexagons in the diamond (111) plane retain the same orientation as the flat hexagons in the original graphite sheet. We conclude that the diamond can nucleate with an epitaxial relationship to the graphite. Some of the edges of the graphite sheets may have been converted to diamond by the atomic hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353327
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Low pressure synthesis of bulk, polycrystalline gallium nitride (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 179-181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118350
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxially grown diamond on a c-BN {111} surface (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1336-1338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous diamond film with a thickness of about 10 μm was grown on {111} faces of a single-crystal cubic boron nitride (c-BN) by hot-filament chemical vapor deposition (CVD). Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109723
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    Paper (German National Licenses)
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