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  • 1
    Electronic Resource
    Electronic Resource
    Charge carrier transport and recombination at the interface between disordered organic dielectrics (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2352-2357 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic model of charge carrier hopping at the interface separating two disordered organic materials in organic light-emitting diodes (OLEDs) is formulated. It is shown that the rate of charge carrier injection across such an interface is much lower than the rate of first interfacial jumps, most of which are followed by return carrier jumps back into initially occupied sites. In OLEDs, the rate of injection across the interface determines the leakage current while the rate of radiative recombination is proportional to the first-jump rate. Therefore, the marked difference between the injection rate and the rate of first carrier jumps across the interface implies a much higher efficiency of carrier recombination at the interface than predicted by the conventional Langevin theory of recombination. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388566
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  • 2
    Electronic Resource
    Electronic Resource
    A model of electroluminescence in organic double-layer light-emitting diodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9283-9290 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model has been developed for charge recombination in double-layer organic light-emitting diodes (LEDs) in which charge transport across the interface between the anodic and cathodic cell compartments is impeded by energy barriers. Current flow is assumed to be controlled by the interplay between the field-assisted injection of majority carriers (holes) and minority carriers (electrons) at the contacts and field-assisted barrier crossing, both obeying Fowler–Nordheim-type relations. Charge recombination at the internal interface is considered as the dominant source for electroluminescence. Accumulation of majority carriers at that interface causes an enhancement of the cathodic electric field giving rise to enhanced electron injection. This effect tends to compensate for imbalanced injection due to different energy barriers at the contacts and causes an increase of the luminescence yield as compared to single-layer LEDs. The model is able to predict (i) the redistribution of the electric field inside the LED, (ii) the field dependence of the cell current, (iii) the dependence of the steady state luminescence intensity, (iv) the luminescence yield as a function of the cell current, and (v) the characteristic rise time of the light output, each parametric in the cathodic and the interfacial energy barriers normalized to the energy barrier for hole injection. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362604
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  • 3
    Electronic Resource
    Electronic Resource
    Charge carrier recombination in organic bilayer electroluminescent diodes. I. Theory (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6954-6962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A previously developed analytic model for charge carrier recombination in bilayer organic light emitting diodes [D. V. Khramtchenkov, V. I. Arkhipov, and H. Bässler, J. Appl. Phys. 79, 9283 (1996)] in which charge transport across the interface between anodic and cathodic cell compartments is impeded by energy barriers is extended to cells of arbitrary thickness of the constituent layers and variable energy barriers. The results indicate that the recombination yield is the result of a complicated interplay between redistribution of the electric field affecting the injection at the electrodes, internal charge accumulation, and field assisted barrier crossing. Unit charge carrier recombination efficiency is predicted to occur at moderate cell voltages and electron injection barriers less than (approximate)0.4 eV. At higher voltages, leakage process across the interface becomes progressively important. With increasing electron-injection barrier, that injection process becomes rate limiting. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365258
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  • 4
    Electronic Resource
    Electronic Resource
    Charge injection into light-emitting diodes: Theory and experiment (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 848-856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory is presented for dark injection from a metallic electrode into a random hopping system, e.g., a conjugated polymer or a molecularly doped polymer. It encompasses injection of a charge carrier from the Fermi level of the electrode into tail states of the distribution of hopping states of the dielectric followed by either return of the charge carrier to the electrode or diffusive escape from the attractive image potential. The latter process resembles Onsager-type geminate pair dissociation in one dimension. The theory yields the injection current as a function of electric field, temperature and energetic width of the distribution of hopping states. At high electric fields it resembles that the current calculated from Fowler-Nordheim tunneling theory although tunneling transitions are not included in the theory. Good agreement with experimental data obtained for diode structures with conjugated polymers as a dielectric is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368146
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  • 5
    Electronic Resource
    Electronic Resource
    Space-charge-limited currents in materials with Gaussian energy distributions of localized states (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4154-4156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424046
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  • 6
    Electronic Resource
    Electronic Resource
    Tandem injection of charge carriers across a metal-dielectric interface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2758-2760 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tandem mechanism of charge injection from a metal contact into an organic dielectric via an intermediate injection-facilitating layer is considered. It is shown that introducing such a layer can enhance charge injection considerably if the energy of transport states in this layer is in between the Fermi level of the contact and the energy of transport states in the bulk dielectric. The optimum energy of transport states in the intermediate layer and the minimum thickness thereof are calculated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320456
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  • 7
    Electronic Resource
    Electronic Resource
    The overshoot effect in transient electroluminescence from organic bilayer light emitting diodes: Experiment and theory (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7514-7525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient electroluminescence (EL) from organic bilayer light emitting diodes addressed by a rectangular voltage pulse often features an overshoot when the voltage is switched off. Experimental results are presented for a variety of hole transporting layers in contact with an oxadiazole layer simultaneously acting both as a blockade for holes and as an electron transport layer. The overshoot occurs in spin coated yet not in vapor deposited samples. A model is developed to rationalize charge recombination under the premise (i) of an interfacial layer of finite thickness between hole and electron transport layers in which both transport molecules coexist and (ii) of interfacial energy barriers impeding both hole and electron passage. It predicts the occurrence of an EL overshoot due to the recombination of stored electrons and holes under the action of their mutual space charge field when the external voltage is switched off. The temporal pattern of the predicted transient EL signal is in good agreement with experiment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365293
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  • 8
    Electronic Resource
    Electronic Resource
    Excavation of rock cuts for dams by the electrothermal method of fracturing rocks (1976)
    Springer
    Power technology and engineering 10 (1976), S. 124-130 
    Details
    ISSN: 1570-1468
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Notes: Conclusions To create a flow-line mechanized technology for excavating rock in the protective layer in foundations and slopes of cuts and the construction of rock cuts for the core of dams without artificial disturbance of the adjacent mass it is necessary to investigate the parameters of electrothermomechanical fracturing of rocks on large areas; to design a machine tool for clearing rock foundations; and to determine the optimal parameters of electrothermomechanical fracturing of rocks under different mining and geologic conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02406479
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  • 9
    Electronic Resource
    Electronic Resource
    A model of photoinduced anisotropy in glassy semiconductors (1998)
    Springer
    Semiconductors 32 (1998), S. 891-895 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A model of photoinduced optical anisotropy in amorphous semiconductors is studied theoretically. The change in the optical characteristics of a sample is associated with the photogeneration of geminate electron-hole pairs. If the pairs are generated by linearly polarized light, then the dipole moments of the geminate pairs lie mainly in the polarization plane, making the sample optically anisotropic. The model associates the optical anisotropy of the sample with the mean-square projection 〈P z 2 〉 of the dipole moment per unit volume on the polarization axis of the radiation. The evolution of 〈P z 2 〉 is determined by the kinetics of the drift and recombination of carriers in geminate pairs. The kinetics of the photoinduced anisotropy under continuous irradiation of the sample and its relaxation as a result of irradiation with pulsed polarized light is calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187479
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  • 10
    Electronic Resource
    Electronic Resource
    Langevin-recombination-controlled explosive kinetics of electroluminescence in organic semiconductors (1999)
    Springer
    Semiconductors 33 (1999), S. 862-864 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The kinetics of electroluminescence in organic semiconductors is investigated theoretically taking into account the strong dependence, characteristic of these materials, of the charge-carrier mobility on the electric field strength. Recombination of electron-hole pairs under the influence of an external electric field and the electric field due to the Coulomb interaction is investigated on the basis of the Langevin theory. It is shown that as a result of the nonuniformity of the field and the field-dependence of the mobility, the recombination kinetics after the external field is switched off is explosive.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187799
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