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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2581-2583 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An atomic oxygen beam generated by a microwave plasma source has been used to clean the surface of high-Tc superconducting a- and c-axis oriented YBa2Cu3O7−δ (YBCO) epitaxial thin films. The crystallinity and electronic structure of the cleaned films have been characterized in situ using reflection high energy electron diffraction, low energy electron diffraction (LEED), and ultraviolet and x-ray photoemission spectroscopies (UPS, XPS). Exposure of the surface at 350 °C to the atomic oxygen beam yields sharp LEED spots and a metallic feature at the Fermi level. For a-axis films, clear LEED patterns and a Fermi edge in UPS spectra of a recleaned surface are simultaneously observed. The contact resistance between a cleaned a-axis YBCO film and in situ deposited gold was found to be in the range of 10−10–10−9 Ω cm2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2842-2844 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resolution of electrostatic force microscopy (EFM) is enhanced when multiwalled carbon nanotubes are used as extensions on conventional silicon cantilevers. Multiwalled nanotubes provide robust, high aspect ratio, conducting tips that minimize topographic dependence of gradients in the capacitance between the tip/cantilever and the substrate. Comparison of simultaneously acquired topographical and EFM images taken at the intersection of overlapping electrodes of electrically biased Al–Al2O3–Al tunnel junctions confirm the improved performance. This enhancement enables us to determine the surface contact potential differences between individual nanotubes within a bundle with resolutions of 5 mV and 10 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 302-304 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Four-terminal ac impedance measurements have been used to characterize Al–Al2O3–Al tunnel-junction capacitors over the frequency range of 10 Hz–100 kHz. The insulating barriers are thin enough to assure that the response can be modeled by a frequency-dependent interface capacitance in parallel with a frequency-independent tunnel junction resistor R0. The data reveal no sign of loss peaks down to 10 Hz and the impedance curves for a single junction, annealed to give different tunnel-junction resistance, collapse onto a single curve when R0 is used as a scaling parameter. The loss mechanism is ascribed to interface traps and is found to give an unusual asymptotic phase angle response when the real and imaginary parts of the complex capacitance are plotted against each other. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 12 (1999), S. 159-162 
    ISSN: 1572-9605
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A geometric renormalization associated with microstructure in coalescing silver films is shown to be responsible for metallic behavior on anomalously high resistivity scales. The signature for this effect, a proportional enhancement of residual resistivity and the temperature slope, may help determine the relevance of microstructure to other “band metal” systems.
    Type of Medium: Electronic Resource
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