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  • 1
    Electronic Resource
    Electronic Resource
    Micromagnetic computation for wall coercivity caused by magnetic nonuniformity : 35TH ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS San Diego, California (USA) 29 Oct−1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4853-4855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wall coercivity caused by the magnetic nonuniformity has been studied numerically. The Landau-Lifshits-Gilbert (LLG) equation is integrated by an explicit scheme of the modified Dufort-Frankel method. The computation was carried out for a two-dimensional grid system representing the magnetization direction in a magnetic film plane. Typical magnetic parameters for magneto-optic recording media were assumed. Spatial variations of uniaxial anisotropy were treated as the magnetic nonuniformity. The validity of our numerical approach was demonstrated with preliminary one-dimensional computations, compared to analytical solutions. A wall coercive field of 2.5 kOe was observed for the wall coupling with a pinning site (30-A(ring) width and 360-A(ring) spacing along the wall) of 10 times larger anisotropy compared to the ordinary region. A two-dimensional anisotropy variation (K=106–107 erg/cm3) with a wavelength larger than 60 A(ring) also caused a wall coercivity on the order of 1 kOe, compared to those in magneto-optic recording media. It was also found that a fine pinning site on the order of 100 A(ring) caused a notable coercivity for the bubble domain wall surrounding it.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348226
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  • 2
    Electronic Resource
    Electronic Resource
    Perpendicular spin valve behavior in a microstructured Co/Cu-Cu oxide/Co trilayer : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5318-5320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report a perpendicular spin valve behavior in a microstructured noncoupling magnetic trilayer system of Co/Cu-Cu oxide/Co. The Co thin films having markedly different coercivity Hc were prepared with a vacuum evaporation with electron beam (Hc= 20–30 Oe) and rf sputtering (Hc= 90–260 Oe), which enables the selective switching of the magnetization in the base and counter Co layers. The film surface of the Cu was oxidized by the rf sputter etching, which results in the increase of the resistance for the perpendicular current and enables measurements of the perpendicular spin valve behavior at room temperature. The additional spacer layer of sputtered SiO2 with a contact hole of 5 μm diameter was fabricated with photolithographic method between the bottom Co and the intermediate Cu layer, which defined the current path perpendicular to the film plane. The measured magnetoresistance ratio was 0.85% (dR=7.6 mΩ, R=0.89 Ω) at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361364
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  • 3
    Electronic Resource
    Electronic Resource
    Fundamental studies of stripe-domain chopping in the presence of magnetic fields : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6643-6645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of externally uniform applied orthogonal and parallel in-plane magnetic fields on the stripe-chopping characteristics and negative vertical Bloch line replication probability have been studied experimentally and by numerical simulation on a 5 μm bubble film. The orthogonal and parallel in-plane fields on the stripe domain were varied from −50 to 50 Oe and −9 to 9 Oe, respectively, to represent actual working device parameters. The numerical simulation results agree with the experimental data, confirming the suppression of horizontal Bloch line nucleation by the external-uniform in-plane fields and the in-plane field components of the chopping conductor. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361911
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  • 4
    Electronic Resource
    Electronic Resource
    Micromagnetic computation for wall and Bloch line coercivity in thin films with perpendicular anisotropy : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6089-6091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wall and vertical Bloch line (VBL) coercivity arising from spatial nonuniformity in the material parameters has been investigated for a typical 5-μm bubble garnet film by means of a two-dimensional micromagnetic computation. Two-dimensional sinusoidal modulations in the magnitude of the uniaxial anisotropy were assumed as a model for a compositional nonuniformity. Nonuniformities with a spatial wavelength comparable to the wall width were found to exert the largest pinning effect. The typical computed value for the wall and VBL coercivity were 0.7 and 2.2 Oe, respectively, where 10% variation and wavelength of 0.47 μm were assumed. The tendency, that the VBL coercivity is larger than that for the domain wall, agrees with the experimental results reported previously. The wall and VBL coercivity caused by a nonuniform exchange constant have also been computed and compared to the analytical solutions due to the step-like variation of wall and VBL energies, respectively. The larger VBL coercivity compared to that for the wall was observed for a local modulation with the size less than wall width and period more than 1 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355468
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  • 5
    Electronic Resource
    Electronic Resource
    Micromagnetic study on write operation in submicron magnetic random access memory cell : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6646-6648 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a spin-valve random access memory, the binary bit states of the storage cell are determined by the magnetization direction in the free magnetic layer. The write operation of a submicron memory cell element has been studied by a micromagnetic computation based on an energy minimization scheme, which aids in the chip design. The magnetization of the binary bit states in the element was found to take a single domain structure having the opposite direction of the long-axis component. The mean long-axis component of magnetization of each binary state was ±0.97 without external fields. The selective switching of the bit state in the element was performed by the write currents applied into the two level conductors overlying the element for various conditions. The influence of the write currents to the neighboring element on a two-dimensional memory array with a 1×1 μm pitch was also simulated, in order to confirm the selective switching of the memory element. It was found that the selective write current amplitude decreased with an increasing assist current amplitude and the range was extended by the large difference of the transverse magnetic field between the selected and neighboring element. The effect of the exchange interaction from the pinned magnetic layer on the write operation was also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361912
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  • 6
    Electronic Resource
    Electronic Resource
    Successive Bloch line write operation in a 1-μM bubble material : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6086-6088 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The successive vertical Bloch line (VBL) write operation has been performed in an as-grown 1-μm bubble material with a flank wall writing scheme. An unwinding VBL pair was nucleated by a domain expanding pulse current (200-mA amplitude, 200-ns pulse width, 8-ns rising edge) applied through a hair-pin type conductor (gap:2.6 μm, width:4 μm). The VBL position was controlled by a local in-plane magnetic field produced by a conductor current of 30 mA and a uniform in-plane magnetic field of 10 Oe. The above operating parameters were adjusted by measuring the collapse field of the stripe domain as a function of the parameters. The increase of bubble collapse field from 442 to 513 Oe in accordance with the number of write operations indicated a successful write operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355467
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  • 7
    Electronic Resource
    Electronic Resource
    Spin dependent transport perpendicular to CoPt/S/Co (S=Si, Ge) trilayer : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5449-5451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report spin dependent electron transport perpendicular to a ferromagnet/semiconductor/ferromagnet trilayer with the current perpendicular to the plane (CPP) geometry and fabricated by a photolithographic technique. The CPP current was defined with a contact hole of 20 μm diameter produced in a SiO2 spacing layer. A CoPt/S/Co trilayer was used in the present study. Various film deposition methods were studied for optimum performance. A superior hard magnetic property was obtained in rf sputtered CoPt, which results in a well defined selective magnetization switching between CoPt and Co layers. The magnetoresistance (MR) effects have been confirmed by the measurement of MR hysteresis for various semiconductor layers. The values of MR change ΔR at room temperature observed in sputtered Ge (42 nm), evaporated Si (30 nm), and sputtered Si (16 nm) were 0.40 mΩ (R=1.3 Ω), 0.30 mΩ (R=2.4 Ω), and 5.5 mΩ (R=19 Ω), respectively. The magnetron sputtering was found to be a most promising method for producing a pinhole free semiconductor layer of order 20 nm thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364566
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of Ge1−xMnxTe ferromagnetic fine structure using phase change technology (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7389-7391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a novel fabrication method of desirable ferromagnetic fine structure patterns in an amorphous GeMnTe film by using phase change optical disk technology. The a-Ge1−xMnxTe films are prepared by the rf sputtering and ionized-cluster beam (ICB) methods. The characteristics of crystalline wire fabricated by irradiating a laser beam in a-Ge1−xMnxTe films are reported. The ferromagnetic crystalline wire pattern of 1 μm in width is successfully formed in this experiment. The magnetic property of crystalline wire for the sputtering methods is similar to that for the ICB method. Magnetoresistance exhibits the negative in both cases of the magnetic fields applied along the longitudinal and transverse directions of crystalline wires. Through the measurement of the magnetic field angular dependence of magnetroresistance, anisotropic magnetoresistance-like behavior is observed in a diluted magnetic semiconductor system. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359474
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  • 9
    Electronic Resource
    Electronic Resource
    Controlling Bloch lines and domain chopping for multiple stripes aligned in parallel (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3171-3173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Controlling vertical Bloch line (VBL) position and stripe domain chopping in multiple stripe domains, aligned in parallel by a period of 12 μm, are studied experimentally using a 5-μm bubble garnet film. Patterned high coercive-force CoPt films aligned in parallel are used for stabilizing the stripe domain. During the stripe stretching process, the VBL motion at the stripe head was controlled by the dc conductor current to get two different wall states: one with a VBL at the stripe head and the other without VBL. Stripe chopping experiments for VBL detection have been performed using hairpin and meandering conductors. We found that the meandering conductor presents excellent characteristics; the bias field margin and the chopping pulse amplitude margin are 58 Oe±6% and 133 mA±11%, respectively, for one stripe. VBL generation by the meandering conductor has also been studied using the same sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340856
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  • 10
    Electronic Resource
    Electronic Resource
    Carrier-enhanced ferromagnetism in Ge1−xMnxTe (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1013-1015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the dependence of magnetic properties on the carrier concentration of IV–VI diluted magnetic semiconductor Ge1−xMnxTe prepared by ionized-cluster beam technique. With increasing carrier concentration, the magnetic properties drastically change; saturation magnetization increases and coercive field decreases in hysteresis loop, and the Curie temperature increases. These results obviously show carrier-enhanced ferromagnetic order. The similar effect is also observed in magnetoresistance behavior. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445477
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