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Growth optimization of n-type GaAs on GaAs(201) substrates (1994)

Williams, J. P. ; Westwood, D. I. ; Sobiesierski, Z. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 612-614

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A study of the growth by molecular-beam epitaxy of Si-doped n -type GaAs on the GaAs(201) surface is presented. The motivation for attempting growth on this particular plane, apart from fundamental considerations, is in connection with an investigation of off-axis transport in GaAs. The effects of growth temperature and doping on GaAs(201) and GaAs(100) samples have been compared using the Hall effect, low-temperature photoluminescence (PL), and Nomarski interference contrast microscopy. These studies showed that the PL, onset of conduction, and mobility behavior were very similar for both orientations. It was possible to dope n-GaAs/GaAs(201) reliably from NSi∼4×1014 to 6×1018 cm−3, the highest mobility of 96 000 cm2 V−1 s−1 measured at 77 K, being obtained for a sample doped at NSi∼4×1014 cm−3.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357056

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Oscillations in the Surface Resistance of Bismuth as a Function of Magnetic Field (1965)

MARSH, N. W. A. ; AUBREY, J. E.

[s.l.] : Nature Publishing Group

Nature 205 (1965), S. 894-894

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ISSN: 1476-4687

Source: Nature Archives 1869 - 2009

Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics

Notes: [Auszug] Khaikin observed the oscillations using his very sensitive frequency-modulation method7, and made measurements on crystals of two principal orientations, one having the triad axis normal to the sample surface and the other having the triad and a diad in the plane of the surface. A detailed ...