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  • 1
    Electronic Resource
    Electronic Resource
    Absolute magnetometer based on the high-frequency modulation of the kinetic inductance of a superconducting thin film (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1334-1341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The high-frequency thermal modulation of a superconducting closed loop just below its critical temperature gives rise to a spectacular divergence of its kinetic inductance. It is shown that this periodic divergence due to that of the London penetration length λ permits very fine magnetic measurements. A superconducting magnetometer has been designed that can detect the absolute intensity of weak magnetic fields, with a noise level of 10−12 T/(square root of)Hz. This absolute level was reached by the double thermal modulation of a superconducting disk around its critical temperature and of a neighboring superconducting closed loop. As a consequence of the Meissner effect, the superconducting disk gives an estimation of the applied perpendicular magnetic field and removes any incertitude about the number of flux quantums inside the loop. Then, the modulation of the temperature of the loop increases the absolute sensitivity. The detection is performed by a very low-loss superconducting LC resonator set at the input of a cryogenic preamplifier. The thermal modulation is performed by pigtailed laser diodes. Practical limitations and further improvements are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360307
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  • 2
    Electronic Resource
    Electronic Resource
    A two-axis micromachined silicon actuator with micrometer range electrostatic actuation and picometer sensitive capacitive detection (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 2211-2218 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article presents an innovative micromachined silicon actuator. A 50-μm-thick silicon foil is anodically bonded onto a broached Pyrex substrate. A free standing membrane and four coplanar electrodes in close proximity are then lithographied and etched. The use of phosphorus doped silicon with low electrical resistivity allows the application of an electrostatic force between one electrode and the moving diaphragm. This plane displacement and the induced interelectrode variation are capacitively detected. Due to the very low electrical resistivity of the doped silicon, there is no need to metallize the vertical trenches of the device. No piezoelectric transducer takes place so that the mechanical device is free from any hysteretic or temperature dependance. The range of the possible actuation along the x and y axis is around 5 μm. The actual sensitivity is xn=0.54 Å/Hz1/2 and yn=0.14 Å/Hz1/2. The microengineering steps and the electronic setup devoted to design the actuator and to perform relative capacitive measurements ΔC/C=10−6 from an initial value C(approximate)10−13 F are described. The elaborated tests and performances of the device are presented. As a conclusion, some experimental projects using this subnanometric sensitive device are mentioned. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150608
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Noise measurements on silicon J-FETs at low temperature using a very high Q superconducting resonator (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2816-2821 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Noise voltage and noise current measurements have been carried out at different temperatures on two kinds of low-noise silicon J-FET at moderately high frequencies up to 100 kHz. We have made careful noise current measurements by constructing a very low-loss superconducting resonator working in the kHz frequency range, whose quality factor reaches 3×105. At 10 kHz, the measured noise energy lies between 1.1 and 1.8×10−24 W/Hz for both types of transistors, but the ratio between the noise voltage and the noise current exhibits pronounced differences depending on the device under test.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142218
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    Paper (German National Licenses)
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