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  • 1
    Electronic Resource
    Electronic Resource
    Excitonic emissions from hexagonal GaN epitaxial layers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2784-2786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361110
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  • 2
    Electronic Resource
    Electronic Resource
    Spontaneous emission of localized excitons in InGaN single and multiquantum well structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4188-4190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Emission mechanisms of InGaN single quantum well blue and green light emitting diodes and multiquantum well structures were investigated by means of modulation spectroscopy. Their static electroluminescence (EL) peak was assigned to the recombination of excitons localized at certain potential minima in the quantum well. The blueshift of the EL peak caused by the increase of the driving current was explained by combined effects of the quantum-confinement Stark effect and band filling of the localized states by excitons. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116981
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  • 3
    Electronic Resource
    Electronic Resource
    Forward Raman scattering by quasilongitudinal optical phonons in GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5202-5205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quasilongitudinal optical phonons in wurtzite GaN have been studied by Raman spectroscopy in the forward scattering geometry with annular apertures. It is demonstrated that the geometry is simple and powerful for determining frequency variation of quasilongitudinal optical phonons in a relatively wide range of their propagation directions, over which the quasilongitudinal optical phonon frequency changes remarkably. Good agreement is obtained between experimental and theoretical results. Discussion is also given on selection rules for quasilongitudinal optical phonons, which are used to interpret polarized Raman signals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1316056
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3766-3768 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Exciton resonance energies of hexagonal (h-) GaN(0001) epilayers were determined by a combination of high-resolution modulated photoreflectance methods. The results were analyzed thoretically using the Luttinger-Kohn type Hamiltonian for the valence bands under the in-plain biaxial stress, and we obtained the shear deformation potential constants and energy gap in unstrained crystal. Occurrence of the anticrossing of B and C valence bands in tensile biaxially strained h-GaN was suggested. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116000
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