Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3688-3690 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile calculations have been used to study the accumulation layer and surface plasmon excitations at the In-terminated (001)-(4×1) and (111)A-(2×2) surfaces of InAs. For the (001) surface, the surface state density is 4.0±2.0×1011 cm−2, while for the (111)A surface it is 7.5±2.0×1011 cm−2, these values being independent of the surface preparation procedure, bulk doping level, and substrate temperature. Changes of the bulk Fermi level with temperature and bulk doping level do, however, alter the position of the surface Fermi level. Ion bombardment and annealing of the surface affect the accumulation layer only through changes in the effective bulk doping level and the bulk momentum scattering rate, with no discernible changes in the surface charge density. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2695-2697 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that the (001) surface of GaSb can be cleaned efficiently by exposure to atomic hydrogen at substrate temperatures in the range 400–470 °C. This treatment removes carbon and oxygen contamination, leaving a clean, ordered surface with a symmetric (1×3) reconstruction after a total H2 dose of approximately 150 kL. An ordered but partially oxidized surface is generated during cleaning, and the removal of this residual oxide is the most difficult part of the process. Auger electron spectroscopy and low energy electron diffraction were used to monitor the chemical cleanliness and the ordering of the surface during the cleaning process, whereas high resolution electron energy loss spectroscopy was used to probe the electronic structure in the near-surface region. The results obtained indicates that this cleaning procedure leaves no residual electronic damage in the near-surface region of the Te-doped (n∼5×1017 cm−3) samples of GaSb(001) studied. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3615-3617 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of GaAs overgrowth on the structural properties of large low-growth-rate InAs quantum dots (LGR-QDs) grown on GaAs(001) are examined using in situ scanning tunneling microscopy. Strongly anisotropic surface diffusion produces a characteristic valley-ridge structure above the LGR-QDs and the surface is not planarized even after a cap thickness 〉400 Å. The evolution of surface morphology proceeds very differently to the case of smaller conventional growth rate QDs capped under the same conditions, due to the different initial strain states of the QDs.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Abstract. The susceptibility of sablefish, Anoplopoma fimbria (Pallas), a potential candidate for commercial mariculture, to the devastating salmonid pathogen Renibacterium salmoninarum (Rs) and the pathology of the infection were investigated. Sablefish became moribund or died of apparently uncomplicated infections of Rs within 50-71 days following intrapcritoncal inoculation of the pathogen and pure cultures of Rs were re-isolated from some affected individuals. At least one sablefish carried the pathogen up to 165 days post-inoculation when the experiment was terminated. The pathology of the Rs infection in this strictly marine fish is described and the implication of the findings to the operation of salmon marinefarms is discussed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    ISSN: 1365-2761
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...