ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A theoretical description is given of an experimentally established dependence which determines the interrelation between the resistance of a semiconductor structure in weak electric fields and the characteristics of Gunn oscillators. This experimentally established dependence is of considerable practical value since it can be used to predict the main characteristics of diode microwave oscillators using easily measured parameters of dc diodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1262127
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