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  • 1
    Electronic Resource
    Electronic Resource
    Electrically modulated photoluminescence in self-organized InGaAs/GaAs quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2811-2813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of photoluminescence (PL) study of the self-organized InGaAs/GaAs quantum dots (QDs) in a field-effect structure grown by metalorganic vapor phase epitaxy are presented. It has been found that the PL from the QDs strongly depends on the bias voltage. No PL from the QDs ground state can be observed from the reverse biased structure, whereas the PL signal recovers in the forward biased structure. It is proposed that the bias dependence of the PL signal results from the QDs electron occupancy changes driven by the electric field within the structure. Due to a long thermalization time, the photogenerated electrons are swept out of the QDs by the electric field before radiative recombination. The electrically modulated PL (e-m PL), making use of the bias dependence of PL signal, is proposed as a tool for QD investigation. The e-m PL spectra at T=300 and T=4.2 K are analyzed and discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122598
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  • 2
    Electronic Resource
    Electronic Resource
    The persistent photoconductivity effect in modulation Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs quantum well structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent conductivity effect in modulation Si δ-doped In0.2Ga0.8As/GaAs quantum well (QW) structure grown by metal organic vapor phase epitaxy was examined using Hall effect and magnetotransport measurements in magnetic fields up to 12 T at T=1.7 K. No measurable electron density was found in the QW after cooling down the sample in the dark and the electron density in the V-shaped δ-doped potential well (V-QW) of the modulation Si δ-doped layer was two times lower than the electron density of the same Si δ-doped layer in GaAs. The illumination resulted in the increase of electron density in the V-QW at the beginning and consequently in the population of the ground subband in the InGaAs QW. Due to parallel conduction, a nonmonotonic dependence of Hall density as a function of illumination time was observed. The total electron density in the modulation doped InGaAs/GaAs heterostructure after the illumination became approximately equal to the electron density in the Si δ-doped layer in GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119788
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  • 3
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2576-2578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of postgrowth rapid thermal annealing (RTA) on GaAs proximity-capped structures with self-assembled InAs/GaAs quantum dots (QDs) is investigated using transmission electron microscopy (TEM) and photoluminescence (PL). As can be seen from the TEM images, QDs increase their lateral sizes with increasing annealing temperature (up to 700 °C). QDs cannot be distinguished after RTA at temperature 800 °C or higher, and substantial thickening of the wetting layer can be seen instead. The main PL peak blueshifts as a result of RTA. We propose that in the as-grown sample as well, as in samples annealed at temperatures up to 700 °C, the peak is due to the QDs. After RTA at 800 °C and higher the PL peak is due to a modified wetting layer. Relatively fast dissolution of QDs is explained in terms of strain-induced lateral Ga/In interdiffusion. It is proposed that such a process may be of importance in proximity-capped RTA, when no group-III vacancy formation takes place at the sample/capping interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412279
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  • 4
    Electronic Resource
    Electronic Resource
    Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well grown by metalorganic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 999-1001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of transport and quantum mobility of electrons in two-dimensional electron gas (2DEG) in the modulation Si δ-doped pseudomorphic GaAs/In0.2Ga0.8As/Al0.2Ga0.8As quantum well (QW) grown by metalorganic vapor phase epitaxy is presented. Well-resolved Shubnikov–de Haas oscillations of the magnetoresistivity observed at T=4.2 K suggest that the 2DEG with high electron mobility (μt(approximate)46 000 cm2/V s) formed in the QW with no significant parallel conduction. A persistent photoconductivity effect resulted in an increase in electron sheet density. An increase of transport and quantum mobilities up to the onset of the second subband occupancy was observed. Further illumination resulted in a decrease of both mobilities. Strong dependence of the quantum mobility on the thermal history of the investigated sample was attributed to the effect of actual distribution of ionized centers in the sample. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289035
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  • 5
    Electronic Resource
    Electronic Resource
    Electroluminescence from a forward-biased Schottky barrier diode on modulation Si δ-doped GaAs/InGaAs/AlGaAs heterostructure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3992-3994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence (EL) from a forward-biased Schottky barrier diode on modulation Si δ-doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure with high mobility electron gas is investigated in this work. It has been found that the EL from the InGaAs quantum well can be observed at temperatures up to 90 K. The EL line shape depends on the current density, which reflects the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible for the observed optical recombination with electrons in the InGaAs quantum well. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380397
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