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  • 1
    Electronic Resource
    Electronic Resource
    Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3912-3918 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO single crystal thin films were grown on c-plane sapphire using oxygen microwave plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate surfaces were obtained by pre-growth cleaning procedures involving an oxygen plasma treatment. A two dimensional nucleation during the initial growth which is followed by a morphology transition to three dimensional nucleation was observed by in situ reflection high energy electron diffraction. X-ray diffraction (XRD) and photoluminescence investigations suggest that the ZnO epilayer consists of a high quality layer on top of a transition layer containing a high density of defects in the interfacial region. A full width at half maximum (FWHM) of 0.005° is obtained for the ZnO(0002) diffraction peak in an XRD rocking curve, while a broad tail extending from the peak can also be observed. The photoluminescence spectra exhibit dominant bound exciton emission with a FWHM of 3 meV at low temperatures and free exciton emission combined with a very weak deep level emission at room temperature. Recently, these high quality ZnO epilayers have allowed the observation of optically pumped lasing at room temperatures as well as stimulated emission up to 550 K, both of which are due to an exciton related mechanism. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368595
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  • 2
    Electronic Resource
    Electronic Resource
    High temperature excitonic stimulated emission from ZnO epitaxial layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1038-1040 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission spectrum of high quality ZnO epilayers is studied from room temperature up to 550 K. At room temperature and low excitation power a single emission peak is observed which may be identified with the free exciton from its peak energy and dependence on temperature. However, when excitation intensities exceed 400 kW cm−2 a sharp peak emerges at lower energy which we attribute to exciton-exciton scattering. At higher excitation intensities (〉800 kW cm−2) a second stimulated emission peak emerges at even lower energies: we attribute this peak to be stimulated emission of an electron hole plasma. Similar features are observed for all temperatures up to 550 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122077
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  • 3
    Electronic Resource
    Electronic Resource
    Comment on "Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature'' [Appl. Phys. Lett. 65, 520 (1994)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3197-3197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116057
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  • 4
    Electronic Resource
    Electronic Resource
    Optically pumped lasing of ZnO at room temperature (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of optically pumped lasing in ZnO at room temperature. Thin films of ZnO were grown by plasma-enhanced molecular beam epitaxy on (0001) sapphire substrates. Laser cavities formed by cleaving were found to lase at a threshold excitation intensity of 240 kW cm−2. We believe these results demonstrate the high quality of ZnO epilayers grown by molecular beam epitaxy while clearly demonstrating the viability of ZnO based light emitting devices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118824
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  • 5
    Electronic Resource
    Electronic Resource
    Spectral and spatial resolution of photopumped II–VI single quantum well lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1455-1457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple II–VI laser cavities were formed by cleaving epitaxial ZnSe samples containing a single CdSe quantum well of mean thickness about 1 monolayer. Time-integrated stimulated emission spectra of these lasers show little evidence of mode structure. A video camera enables temporal resolution of the stimulated emission spectra. Mode structure appears on the time-resolved spectra. In addition, however, video spectroscopy reveals spatial variations of wavelength and intensity in the laser output which are not well understood. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113652
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  • 6
    Electronic Resource
    Electronic Resource
    Growth and characterization of beryllium-based II–VI compounds (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 512-517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and characterization of beryllium–chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn1−xBexSe varies as Eg=0.0107x+2.790 (eV) for small Be composition (x〈0.25) at 77 K. Lattice-matched ZnBeSe (Eg=2.82 eV) and ZnMgBeSe (Eg=2.975 eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369479
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