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  • 1
    Electronic Resource
    Electronic Resource
    Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6898-6903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 Å) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta/V/Ta diffusion barrier was deposited without concurrent ion bombardment, the insertion of the thin V layer into Ta film was not effective to improve the barrier performance of Ta film, because of the thermal instability of the Ta/V/Ta multilayer caused by the reaction between the Ta/V/Ta films and Si substrate. Meanwhile, when the Ta/V/Ta diffusion barrier was deposited with ion bombardment, the insertion of the thin V layer into Ta film improved barrier properties significantly. This was attributed not only to the densification of grain boundaries in Ta/V/Ta films, but also to the formation of two thermally stable sharp interfaces between Ta and V by ion bombardment, resulting in the reduction of the fast diffusion of Cu through Ta/V/Ta films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370209
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  • 2
    Electronic Resource
    Electronic Resource
    Tantalum–ruthenium dioxide as a diffusion barrier between Pt bottom electrode and TiSi2 ohmic contact layer for high density capacitors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2544-2549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of RuO2 addition on the barrier properties of the Ta layer were investigated at the temperature range of 650–800 °C in air. For the Pt/Ta/TiSi2/poly-Si/SiO2/Si structure, its layer structure was completely collapsed after annealing at 650 °C, resulting in higher total resistance and Schottky characteristics. For the Pt/Ta+RuO2/TiSi2/poly-Si/SiO2/Si structure, however, it exhibited the lower total resistance and ohmic characteristics, and its layer structure was retained up to 800 °C. A Ta amorphous structure by the chemically strong Ta–O or Ta–Ru–O bonds and nonstoichiometric, nanocrystalline RuOx resulted in the formation of a conductive RuO2 phase in the Ta+RuO2 barrier film after an annealing, leading to the prevention of the interdiffusion of Pt, Si, and external oxygen through the diffusion barrier as well as surface oxidation up to 800 °C. Therefore, the thermal stability for the Pt/Ta+RuO2/TiSi2/poly-Si/SiO2/Si structure was higher than that for Pt/Ta/TiSi2/poly-Si/SiO2/Si structure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371090
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of interposed Cr layer on the thermal stability of Cu/Ta/Si structure (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6550-6552 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of Cu/Ta/Cr/Si structure is analyzed and compared with that of Cu/Ta/Si and Cu/Ta/Cr/Ta/Si structures. The Cu/Ta/Si and Cu/Ta/Cr/Ta/Si systems retained their structures up to 600 °C without increase in resistivity but the Cu/Ta/Cr/Si structure was degraded after annealing at 400 °C. In the latter case, the degradation was dominated by the outdiffusion of free Si, probably released from the substrate in the formation of CrSi2. It is suggested that the released Si is reactive and its outdiffusion through Ta layer is facilitated by the high affinity of Si toward Ta, as expected from the large negative value of mixing enthalpy between Ta and Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363676
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  • 4
    Electronic Resource
    Electronic Resource
    Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2832-2834 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of insertion of a thin Zr layer into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr layer into Ta film improved barrier properties significantly when the Ta/Zr/Ta barrier layers were deposited with concurrent ion bombardment. The significant improvement of Ta diffusion barrier properties by insertion of a thin Zr layer into Ta film with ion bombardment was attributed to the densification of grain boundaries in Ta/Zr/Ta films and the formation of an intermixing layer between Ta and Zr by ion bombardment, followed by the reduction of fast diffusion of Cu through Ta/Zr/Ta films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121472
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  • 5
    Electronic Resource
    Electronic Resource
    Suppression of silicide formation in Ta/Si system by ion-beam-assisted deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2451-2453 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the failure temperature of a Ta diffusion barrier for Cu, the suppression of silicide formation in a Ta/Si system by ion-beam-assisted deposition of Ta film was investigated. When the Ta layer was deposited without ion bombardment, the reaction between Ta and Si started at 600 °C. In the case where the Ta film was prepared with concurrent ion bombardment, however, the silicide formation was retarded up to 700 °C. The suppression of Ta silicide formation can be attributed to a densification of grain boundaries in the Ta film by ion bombardment, followed by a reduction of the chemical driving force for the initial stage of silicide formation. The Ta diffusion barrier deposited by ion-beam-assisted deposition effectively suppressed the reaction between Si and Cu layers up to 650 °C for 30 min. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120086
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  • 6
    Electronic Resource
    Electronic Resource
    Control of Co flux through ternary compound for the formation of epitaxial CoSi2 using Co/Ti/Si system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3498-3500 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ternary compound of Co3Ti2Si is suggested as reaction barrier for the formation of epitaxial CoSi2 in the Co/Ti/Si system. It has a role to control Co diffusion to the Si substrate, followed by formation of CoSi2. After Co3Ti2Si was formed, CoO and Ti oxide were formed at surface, depending on Ti thickness. In the case of Ti oxide being at surface, the outdiffusion of Ti in ternary compound was accelerated. Then, the decomposition of Co3Ti2Si occurred by reaction with Ti oxide, resulting in uniform epitaxial CoSi2. However, in the case of CoO being at surface, the Ti outdiffusion was suppressed, followed by thermally decomposition of Co3Ti2Si. This caused nonuniform Co supply to form nonuniform CoSi2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117224
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial reaction and formation mechanism of epitaxial CoSi2 by rapid thermal annealing in Co/Ti/Si(100) system (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2323-2328 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ternary compound of Co3Ti2Si is suggested as a reaction barrier for the formation of epitaxial CoSi2 in the Co/Ti/Si system when adopting the rapid thermal annealing process. It controls Co diffusion to the Si substrate, followed by formation of epitaxial CoSi2. After the epitaxial CoSi2 was formed, the interfacial morphology of the upper layer/ CoSi2 interface was very different according to silicidation temperature, that is, the interface was planar at 800 °C, but rough at 900 °C. This was attributed to the reaction between the upper layer consisting of Co–Ti–Si and the CoSi2 layer at 900 °C, which resulted in Ti-rich precipitates at the surface. The Ti-rich precipitates acted as a diffusion sink of dopant, thus, the leakage current density for the silicidation temperature of 900 °C was much higher than that for the temperature of 800 °C. These results suggest that the silicidation temperature is one of the most critical factors in determining the leakage current of the p+n junction diode. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366040
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  • 8
    Electronic Resource
    Electronic Resource
    Tantalum-microcrystalline CeO2 diffusion barrier for copper metallization (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1333-1336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tantalum diffusion barrier incorporating microcrystalline CeO2 is proposed for Cu metallization and investigated using Auger electron spectroscopy, x-ray diffraction, optical microscopy, transmission electron microscopy, and sheet resistance measurements. The Cu/Ta+CeO2/Si contact system retained its structure up to 800 °C without an increase in resistivity. The cerium dioxide (CeO2) was stuffed along the grain boundaries during the deposition of Ta layer. Because of its heavier atomic weight than O2- or N2-stuffed elements, it inhibited an interdiffusion of Cu and Si through grain boundaries which can act as fast diffusion paths. It also resulted in preventing the outdiffusion of Ta into the overlayer Cu as well as suppressing the formation of Ta silicide up to 800 °C. It appears that the barrier properties of the tantalum incorporating microcrystalline CeO2 are superior to polycrystalline transition metal barriers, polycrystalline nitride barriers, ternary amorphous compound barriers, and N2- and O2-stuffed barriers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366834
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  • 9
    Electronic Resource
    Electronic Resource
    Effect on thermal stability of a Cu/Ta/Si heterostructure of the incorporation of cerium oxide into the Ta barrier (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8074-8076 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of CeO2 addition on the microstructural change of a Ta diffusion barrier film and thermal stability of the Cu/Ta/Si system were investigated. When a Ta layer was prepared with CeO2 addition, the silicide formation was retarded up to 800 °C. The Cu/Ta+CeO2/Si system retained its structure up to 800 °C without an increase in stack resistivity, while the Cu/Ta/Si structure degraded after annealing at 550 °C. The Ta+CeO2 diffusion barrier showed an amorphous microstructure and chemically strong bonds with Ta–Ce–O. It appeared that the thermal stability of the Cu/Ta+CeO2 interface as well as the Ta+CeO2/Si interface was higher than that of both Cu/Ta and Ta/Si interfaces. Therefore, the Ta film prepared by CeO2 addition effectively prevented the interdiffusion of Cu and Si through the diffusion barrier up to 800 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367904
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  • 10
    Electronic Resource
    Electronic Resource
    Mechanism of field emission from chemical vapor deposited undoped polycrystalline diamond films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7508-7518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission characteristics of undoped polycrystalline diamond films with different structural properties have been investigated. By introducing positive bias voltage and/or increasing CH4/H2 ratio, the film quality is significantly deteriorated together with the increase of nondiamond carbon component and the surface morphologies of the films lost their unique facet shape. The reason for the increase of nondiamond carbon content is described in terms of both the increase of substrate temperature and the excessive generation of CHn radicals. It is confirmed that an increase in the nondiamond carbon content markedly enhances field emission properties of diamond films. From the spatial distribution of emission sites, it is suggested that the transport path of field-emitted electrons depends on the nondiamond carbon content: for the film with a large amount of nondiamond carbon, electrons transport preferentially through the conducting mediums such as grain boundaries while for the film with a relatively small amount of nondiamond carbon, electron transport occurs mainly through the diamond surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373016
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