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  • 1
    Electronic Resource
    Electronic Resource
    Wet oxidation of amorphous Si0.67Ge0.25C0.08 grown on (100) Si substrates (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2835-2841 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wet oxidation annealing of thin films of amorphous Si0.67Ge0.25C0.08 was performed over the temperature range from 700 to 950 °C. Changes in composition and microstructure were assessed using Rutherford backscattering spectrometry and transmission electron microscopy. A nearly pure layer of SiO2 with approximately 1 at. % carbon was formed, with Ge being rejected from the oxide at all temperatures. At low temperatures, the oxide formed was very thin. Ge piled up at the oxide/film interface and the thin film microstructure remained amorphous. At higher temperatures, a network of nanocrystals was observed which was believed to provide a grain boundary diffusion path for Ge which had redistributed throughout the remaining layer. It is proposed that the Ge layer had inhibited oxidation at the lower temperatures, whereas its removal resulted in increased oxidation rates at higher temperatures. Annealing at 950 °C for 5 and 6 h resulted in an epitaxial transformation and a single crystal structure. This process occurred as a result of the silicon being removed from the substrate by the oxide front which served as a sink. Germanium then diffused into the vacancies in the substrate forming a new epitaxial layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367044
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  • 2
    Electronic Resource
    Electronic Resource
    Wet oxidation of amorphous and crystalline Si1−x−yGexCy alloys grown on (100)Si substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2244-2246 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of amorphous Si0.65Ge0.27C0.08 and single-crystal Si0.63Ge0.36C0.01 in wet ambient at 700 and 900 °C has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of carbon on the oxidation behavior. The low C content alloy behaved similar to the SiGe alloy: uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, carbon was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.65Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of nanocrystals (∼5 nm diam). The oxidation/annealing treatment has thus provided a useful mechanism for increasing the relative Ge concentration in the SiGeC alloy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113180
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of heteroepitaxial Si1−x−yGexCy films on (100)Si substrates (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2559-2561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin heteroepitaxial films of Si1−x−yGexCy have been grown on (100)Si substrates using atmospheric pressure chemical vapor deposition at 625 °C. The crystallinity, composition, and microstructure of the SiGeC films were characterized using Rutherford backscattering spectrometry, secondary-ion-mass spectrometry, and cross-sectional transmission electron microscopy. The crystallinity of the films was very sensitive to the flow rate of C2H4 which served as the C source. Films with up to 2% C were epitaxial with good crystallinity and very few interfacial defects. Between 800 and 900 sccm of 10% C2H4 in He, the C content increased dramatically from 2% to 10% and the as-grown films changed from crystalline to amorphous. In order to establish deposition conditions for the crystalline-amorphous phase transformation, one SiGeC film was deposited as the 10% C2H4 flow was increased linearly from 500 to 1500 sccm during growth. When the C content reached ∼4%, the film developed considerable stacking defects and disorder, and at around 11% C, the film became amorphous. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112635
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  • 4
    Electronic Resource
    Electronic Resource
    Cu enhanced oxidation of SiGe and SiGeC (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 874-876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of C and Ge additions on the Cu catalyzed oxidation of Si has been performed. It was found that the addition of Ge alone resulted in a marked slowdown in the rate of oxygen incorporation; during the first three days of the experiment the rate of oxygen incorporation was 25 times higher in the Si reference sample. The Ge was incorporated into the oxide. Small amounts of C added to the SiGe compound have a more pronounced effect. Carbon concentrations of less than 2% prevent oxidation of SiGeC for periods of at least one month. Copper enhanced oxidation of Si(100) has produced oxides of several hundred nanometers in under one month. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118302
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